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Plasmonic lithography for the fabrication of surface nanostructures with a feature size down to 9 nm 期刊论文
Nanoscale, 2020, 卷号: 12, 期号: 4, 页码: 2415-2421
作者:  Gao, Ping;  Pu, Mingbo;  Ma, Xiaoliang;  Li, Xiong;  Guo, Yinghui
收藏  |  浏览/下载：21/0  |  提交时间：2021/05/11
Molecular Glass Photoresists with High Resolution, Low LER, and High Sensitivity for EUV Lithography 期刊论文
MACROMOLECULAR MATERIALS AND ENGINEERING, 2018, 卷号: 303, 期号: 6
作者:  Peng, Xiaoman;  Wang, Yafei;  Xu, Jian;  Yuan, Hua;  Wang, Liangqian
收藏  |  浏览/下载：32/0  |  提交时间：2019/04/09
Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 1873-1879
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
The immunity of doping-less junctionless transistor variations including the line edge roughness 会议论文
Hong Kong, Hong kong, August 3, 2016 - August 5, 2016
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：23/0  |  提交时间：2020/11/15
A Simple Method to Decompose the Amplitudes of Different Random Variation Sources in FinFET Technology 其他
2016-01-01
Jiang, Xiaobo; Wang, Runsheng; Huang, Ru; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen
收藏  |  浏览/下载：1/0  |  提交时间：2017/12/03
A Device-Level Characterization Approach to Quantify the Impacts of Different Random Variation Sources in FinFET Technology 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2016
Jiang, Xiaobo; Guo, Shaofeng; Wang, Runsheng; Wang, Xingsheng; Cheng, Binjie; Asenov, Asen; Huang, Ru
收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04
The Immunity of Doping-less Junctionless Transistor Variations Including the Line Edge Roughness 会议论文
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：13/0  |  提交时间：2019/11/15
Line-edge roughness induced single event transient variation in SOI FinFETs 期刊论文
半导体学报（英文版）, 2015
Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru
收藏  |  浏览/下载：8/0  |  提交时间：2017/12/03
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part I-Modeling and Simulation Method 期刊论文
ieee电子器件汇刊, 2013
Jiang, Xiaobo; Wang, Runsheng; Yu, Tao; Chen, Jiang; Huang, Ru
收藏  |  浏览/下载：11/0  |  提交时间：2015/11/10
Investigations on Line-Edge Roughness (LER) and Line-Width Roughness (LWR) in Nanoscale CMOS Technology: Part II-Experimental Results and Impacts on Device Variability 期刊论文
ieee电子器件汇刊, 2013
Wang, Runsheng; Jiang, Xiaobo; Yu, Tao; Fan, Jiewen; Chen, Jiang; Pan, David Z.; Huang, Ru
收藏  |  浏览/下载：7/0  |  提交时间：2015/11/10

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