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CORC

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Coulomb blockade and hopping transport behaviors of donor-induced quantum dots in junctionless transistors* 期刊论文
CHINESE PHYSICS B, 2020, 卷号: 29, 期号: 3, 页码: 038104
作者:  Liu-Hong Ma;   Wei-Hua Han;   Fu-Hua Yang
收藏  |  浏览/下载：10/0  |  提交时间：2021/11/30
Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor 期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 12, 页码: 127302
作者:  Xiao-Di Zhang ;   Wei-Hua Han ;   Wen Liu ;   Xiao-Song Zhao ;   Yang-Yan Guo ;   Chong Yang ;   Jun-Dong Chen ;   Fu-Hua Yang
收藏  |  浏览/下载：10/0  |  提交时间：2020/08/05
Temperature-dependent subband mobility characteristics in n-doped silicon junctionless nanowire transistor 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 066804
作者:  Ya-Mei Dou ;   Wei-Hua Han ;   Yang-Yan Guo ;   Xiao-Song Zhao ;   Xiao-Di Zhang ;   Xin-Yu Wu ;   Fu-Hua Yang
收藏  |  浏览/下载：1/0  |  提交时间：2020/08/05
Observation of hopping transitions for delocalized electrons by temperature-dependent conductance in silicon junctionless nanowire transistors 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 10, 页码: 107303
作者:  Yang-Yan Guo;  Wei-Hua Han;  Xiao-Song Zhao;  Ya-Mei Dou;  Xiao-Di Zhang;  Xin-Yu Wu ;   Fu-Hua Yang
收藏  |  浏览/下载：10/0  |  提交时间：2020/08/05
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载：6/0  |  提交时间：2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载：10/0  |  提交时间：2019/11/15
The Performance Investigation of Junctionless Transistor by Considering Different Recessed Gates 会议论文
Shenzhen, China, June 6, 2018 - June 8, 2018
作者:  Lou, Haijun;  Li, Wentao;  Yang, Yumei;  Lin, Xinnan
收藏  |  浏览/下载：2/0  |  提交时间：2020/11/15
Source/Drain Engineered Charge-Plasma Junctionless Transistor for the Immune of Line Edge Roughness Effect 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 5, 页码: 1873-1879
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：34/0  |  提交时间：2019/11/15
The immunity of doping-less junctionless transistor variations including the line edge roughness 会议论文
Hong Kong, Hong kong, August 3, 2016 - August 5, 2016
作者:  Wan, Wenbo;  Lou, Haijun;  Xiao, Ying;  Lin, Xinnan
收藏  |  浏览/下载：23/0  |  提交时间：2020/11/15
沟道形状对无结型多栅器件性能影响探究 期刊论文
2016, 2016
胡梦月; 梁仁荣; 王敬; 许军; HU Mengyue; LIANG Renrong; WANG Jing; XU Jun
收藏  |  浏览/下载：6/0

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