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Gate-Controlled Magnetic Phase Transition in a van der Waals Magnet Fe5GeTe2 期刊论文
NANO LETTERS, 2021, 卷号: 21
作者:  Tan, Cheng;  Xie, Wen-Qiang;  Zheng, Guolin;  Aloufi, Nuriyah;  Albarakati, Sultan
收藏  |  浏览/下载:36/0  |  提交时间:2021/08/30
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design 会议论文
Guilin, China, June 4-6, 2021
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Xie C(谢闯);  Yang ZJ(杨志家)
收藏  |  浏览/下载:11/0  |  提交时间:2022/02/04
Nanowire gate-all-around MOSFETs modeling: ballistic transport incorporating the source-to-drain tunneling 期刊论文
Japanese Journal of Applied Physics, 2020, 卷号: 59, 期号: 7, 页码: 1-9
作者:  Cheng H(程贺);  Liu TF(刘铁锋);  Zhang C(张超);  Liu ZF(刘志峰);  Yang ZJ(杨志家)
收藏  |  浏览/下载:15/0  |  提交时间:2020/07/11
Analytic Compact Model of Short-channel Cylindrical ballistic GAA MOSFET Including SDT effect 会议论文
Zhangjiajie, China, April 24-26, 2020
作者:  Cheng H(程贺);  Zhang C(张超);  Liu TF(刘铁锋);  Yang ZJ(杨志家);  Zhang ZP(张志鹏)
收藏  |  浏览/下载:7/0  |  提交时间:2020/08/01
Achieving high gating performance for ion mobility spectrometry by manipulating ion swarm spatiotemporal behaviors in the vicinity of ion shutter 期刊论文
ANALYTICA CHIMICA ACTA, 2019, 卷号: 1052, 页码: 96-104
作者:  Wang, Weiguo;  Li, Mei;  Jiang, Dandan;  Li, Haiyang;  Chen, Hong
收藏  |  浏览/下载:53/0  |  提交时间:2019/06/20
Achieving high gating performance for ion mobility spectrometry by manipulating ion swarm spatiotemporal behaviors in the vicinity of ion shutter 期刊论文
Analytica chimica acta, 2019, 卷号: 1052, 页码: 96-104
作者:  Chen, Hong;  Chen, Chuang;  Li, Mei;  Wang, Weiguo;  Jiang, Dandan
收藏  |  浏览/下载:60/0  |  提交时间:2019/05/08
High Performance Vertical Resonant Photo-Effect-Transistor with an All-Around OLED-Gate for Ultra-Electromagnetic Stability 期刊论文
ACS NANO, 2019, 卷号: 13, 页码: 8425-8432
作者:  Li, Qikun;  Bi, Sheng;  Asare-Yeboah, Kyeiwaa;  Na, Jin;  Liu, Yun
收藏  |  浏览/下载:63/0  |  提交时间:2019/12/02
Positive Bias Temperature Instabilities in Vertical Gate-all-around poly-Si Nanowire Field-effect Transistors 会议论文
1st IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018, November 21, 2018 - November 23, 2018
作者:  Yang, Wenjing;  Li, Yuan;  Wang, Bo;  Qian, He;  Chen, Jiezhi
收藏  |  浏览/下载:2/0  |  提交时间:2019/12/31
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang YM(杨育梅)
收藏  |  浏览/下载:6/0  |  提交时间:2020/11/13
High-k Spacer Consideration of Ultrascaled Gate-All-Around Junctionless Transistor in Ballistic Regime 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 12, 页码: 5282-5288
作者:  Yang, Yumei;  Lou, Haijun;  Lin, Xinnan
收藏  |  浏览/下载:10/0  |  提交时间:2019/11/15


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