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CORC

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Single event effects in commercial FRAM and mitigation technique using neutron-induced displacement damage 期刊论文
Microelectronics Reliability, 2019, 卷号: 92, 页码: 149-154
作者:  Wei, Jia-nan;  Guo, Hong-xia;  Zhang, Feng-qi;  He, Chao-hui;  Ju, An-an
收藏  |  浏览/下载：28/0  |  提交时间：2019/11/19
Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices 会议论文
作者:  Chao, Hong;  Yuan, Fang-Yuan;  Wu, Huaqiang;  Deng, Ning;  Wang, Chongjie
收藏  |  浏览/下载：4/0  |  提交时间：2019/11/21
Self-Selection RRAM Cell With Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016
Huang, Peng; Chen, Sijie; Zhao, Yudi; Chen, Bing; Gao, Bin; Liu, Lifeng; Chen, Yong; Zhang, Ziying; Bu, Weihai; Wu, Hanming; Liu, Xiaoyan; Kang, Jinfeng
收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03
信息推送-澳大利亚宣布对848项研究注资5.8亿澳元（附心理学、认知科学及神经科学分类项目清单） 其他
2014-10-29
作者:  王玮
收藏  |  浏览/下载：97/0  |  提交时间：2014/10/29
Analysis of the Voltage-Time Dilemma of Metal Oxide-Based RRAM and Solution Exploration of High Speed and Low Voltage AC Switching 期刊论文
ieee 纳米技术汇刊, 2014
Huang, Peng; Wang, Yijiao; Li, Haitong; Gao, Bin; Chen, Bing; Zhang, Feifei; Zeng, Lang; Du, Gang; Kang, Jinfeng; Liu, Xiaoyan
收藏  |  浏览/下载：8/0  |  提交时间：2015/11/10
Record Low-Power Organic RRAM With Sub-20-nA Reset Current 期刊论文
ieee electron device letters, 2013
Bai, Wenliang; Huang, Ru; Cai, Yimao; Tang, Yu; Zhang, Xing; Wang, Yangyuan
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10
Self-compliance multilevel resistive switching characteristics in TiN/HfOx/Al/Pt RRAM devices 其他
2013-01-01
Hou, Y.; Chen, B.; Gao, B.; Lun, Z.Y.; Xin, Z.; Liu, R.; Liu, L.F.; Han, D.D.; Wang, Y.; Liu, X.Y.; Kang, J.F.
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
Nonlinear dependence of set time on pulse voltage caused by thermal accelerated breakdown in the Ti/HfO2/Pt resistive switching devices 期刊论文
应用物理学快报, 2012
Cao, M. G.; Chen, Y. S.; Sun, J. R.; Shang, D. S.; Liu, L. F.; Kang, J. F.; Shen, B. G.
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/12
A MIM Device Featuring both RRAM and Diode Behavior 其他
2012-01-01
Tan, Shenghu; Zhang, Lijie; Pan, Yue; Huang, Yinglong; Tang, Yu; Yang, Gengyu; Mao, Jun; Cai, Yimao; Huang, Ru
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
Modeling of Retention Failure Behavior in Bipolar Oxide-Based Resistive Switching Memory 期刊论文
ieee electron device letters, 2011
Gao, Bin; Zhang, Haowei; Chen, Bing; Liu, Lifeng; Liu, Xiaoyan; Han, Ruqi; Kang, Jinfeng; Fang, Zheng; Yu, Hongyu; Yu, Bin; Kwong, Dim-Lee
收藏  |  浏览/下载：1/0  |  提交时间：2015/11/10

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