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西安光学精密机械研究... [6]
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Interstitial doping of K and Mn induced structural distortion and electronic properties changes in all-inorganic CsPbI2Br perovskite
期刊论文
Materials Research Express, 2022, 卷号: 9, 期号: 4
作者:
Xue, Hong-Tao
;
Hu, Zhong-Lin
;
Luo, Ya-Qiao
;
An, Jun-Peng
;
Tang, Fu-Ling
收藏
  |  
浏览/下载:30/0
  |  
提交时间:2022/06/20
Binary alloys
Bromine compounds
Calculations
Electronic properties
Lead compounds
Manganese
Photovoltaic effects
Structural properties
CsPbI2br perovskite
First principle calculations
Inorganics
Interstitial doping
Interstitials
K-doping
Mn-doping
Octahedral interstices
Property changes
Structural distortions
Electronic property of intrinsic point defect system on beta-Si3N4 (0001) surface
期刊论文
MODERN PHYSICS LETTERS B, 2021, 卷号: 35, 期号: 21
作者:
Li, Lingxia
;
Lu, Xuefeng
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
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  |  
浏览/下载:22/0
  |  
提交时间:2021/10/14
beta-Si3N4
electrical property
vacancy
interstitial defect
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
期刊论文
Light: Science and Applications, 2021, 卷号: 10, 期号: 1
作者:
K. Jiang
;
X. Sun
;
Z. Shi
;
H. Zang
;
J. Ben
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  |  
浏览/下载:9/0
  |  
提交时间:2022/06/13
Structure-Dependent Thermoelectric Properties of GeSe1-xTex(0 <= x <= 0.5)
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12, 期号: 37, 页码: 41381-41389
作者:
Wang, Zhiran
;
Wu, Hong
;
Xi, Ming
;
Zhu, Huaxing
;
Dai, Lu
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  |  
浏览/下载:16/0
  |  
提交时间:2020/12/01
thermoelectric
structure
GeSe1-xTex
defects
carrier concentrations
Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains
期刊论文
PHOTONICS RESEARCH, 2020, 卷号: 8, 期号: 6, 页码: 812-818
作者:
Guo, Wei
;
Chen, Li
;
Xu, Houqiang
;
Qian, Yingda
;
Sheikhi, Moheb
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  |  
浏览/下载:61/0
  |  
提交时间:2020/12/16
GAN
BOUNDARIES
INTERFACE
KINETICS
GROWTH
Dual-Additive Assisted Chemical Vapor Deposition for the Growth of Mn-Doped 2D MoS2 with Tunable Electronic Properties
期刊论文
SMALL, 2019, 页码: 9
作者:
Cai, Zhengyang
;
Shen, Tianze
;
Zhu, Qi
;
Feng, Simin
;
Yu, Qiangmin
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  |  
浏览/下载:20/0
  |  
提交时间:2021/02/02
doping
dual-additive chemical vapor deposition
electronic properties
field effect transistors
hydrogen evolution reaction
MoS2
Structural stability and electronic properties of the (0001) inversion domain boundary in III-nitrides
期刊论文
COMPUTATIONAL MATERIALS SCIENCE, 2018, 卷号: 154, 页码: 152-158
作者:
Li, Siqian
;
Lei, Huaping
;
Anglade, Pierre-Matthieu
;
Chen, Jun
;
Ruterana, Pierre
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  |  
浏览/下载:44/0
  |  
提交时间:2019/12/20
Inversion domain boundary (IDB)
Group III-nitrides
DFT
Chemical bonding
Electronic structure
Enhanced hole-dominated photocatalytic activity of doughnut-like porous g-C3N4 driven by down-shifted valance band maximum
期刊论文
CATALYSIS TODAY, 2018, 卷号: 307, 页码: 147-153
作者:
Xiao, Jiadong
;
Xie, Yongbing
;
Li, Chuanhao
;
Kim, Jae-Hong
;
Tang, Kexin
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2018/06/11
Doughnut-like Structure
Porous G-c3n4
Valance Band
Positive Hole Oxidation
Enhanced hole-dominated photocatalytic activity of doughnut-like porous g-C3N4 driven by down-shifted valance band maximum
会议论文
Newcastle, AUSTRALIA, JUL 10-13, 2016
作者:
Xiao, Jiadong
;
Xie, Yongbing
;
Li, Chuanhao
;
Kim, Jae-Hong
;
Tang, Kexin
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2019/06/21
Doughnut-like structure
GRAPHITIC CARBON NITRIDE
Porous g-C3N4
VISIBLE-LIGHT
Valance band
HYDROGEN EVOLUTION
Positive hole oxidation
QUANTUM DOTS
OXIDATION
WATER
CATALYSIS
NANOPARTICLES
DEGRADATION
PERFORMANCE
Controllable magnitude and anisotropy of the electrical conductivity of Hf3C2O2 MXene
期刊论文
Journal of Physics: Condensed Matter, 2017, 卷号: 29, 期号: 16
作者:
Francisco,Joseph S
;
Zha,Xian-Hu
;
Zhou,Jie
;
Luo,Kan
;
Lang,Jiajian
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  |  
浏览/下载:32/0
  |  
提交时间:2019/06/20
MXene
electronic structure
electrical conductivity
strain sensor
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