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北京航空航天大学 [7]
内容类型
期刊论文 [6]
会议论文 [1]
发表日期
2019 [3]
2018 [1]
2017 [3]
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Addressing Failure and Aging Degradation in MRAM/MeRAM-on-FDSOI Integration
期刊论文
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 239-250
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida Alves de Barros
;
Liu, Xinning
;
Shan, Weiwei
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2019/12/30
Fully depleted silicon-on-insulator (FDSOI)
magnetic tunnel junction (MTJ)
spin transfer torque magnetic random access memory (STT-MRAM)
voltage-controlled magnetic anisotropy (VCMA)
magnetoelectric random access memory (MeRAM)
aging
reliability
variability
Voltage-Controlled Magnetoelectric Memory Bit-cell Design With Assisted Body-bias in FD-SOI
会议论文
GLSVLSI '19 - PROCEEDINGS OF THE 2019 ON GREAT LAKES SYMPOSIUM ON VLSI, 2019-01-01
作者:
Cai, Hao
;
Han, Menglin
;
Shan, Weiwei
;
Yang, Jun
;
Wang, You
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/30
VCMA-MTJ
design boundary
voltage assisted techniques
ultra-low power
FD-SOI
Compact Model for Negative Capacitance Enhanced Spintronics Devices
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 页码: 2795-2801
作者:
Gao, Tianqi
;
Zeng, Lang
;
Zhang, Deming
;
Zhang, Youguang
;
Wang, Kang L.
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2019/12/30
All spin logic (ASL) device
compact model
magnetic tunnel junction (MTJ)
negative capacitance (NC) effect
spin transfer torque (STT)
voltage-controlled magnetic anisotropy (VCMA)
Self-Adaptive Write Circuit for Magnetic Tunneling Junction Memory With Voltage-Controlled Magnetic Anisotropy Effect
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2018, 卷号: 17, 页码: 492-499
作者:
Long, Mingzhi
;
Zeng, Lang
;
Gao, Tianqi
;
Zhang, Deming
;
Qin, Xiaowan
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Magnetoelectric random access memory (MeRAM)
voltage controlled magnetic anisotropy (VCMA)
magnetic tunneling junction (MTJ)
write circuit
self-adaptive
Modeling and Exploration of the Voltage-Controlled Magnetic Anisotropy Effect for the Next-Generation Low-Power and High-Speed MRAM Applications
期刊论文
IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2017, 卷号: 16, 页码: 387-395
作者:
Kang, Wang
;
Ran, Yi
;
Zhang, Youguang
;
Lv, Weifeng
;
Zhao, Weisheng
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction (MTJ)
nonvolatile memory
spin transfer torque (STT)
voltage-controlled magnetic anisotropy (VCMA)
Stateful Reconfigurable Logic via a Single Voltage-Gated Spin Hall-Effect Driven Magnetic Tunnel Junction in a Spintronic Memory
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4295-4301
作者:
Zhang, He
;
Kang, Wang
;
Wang, Lezhi
;
Wang, Kang L.
;
Zhao, Weisheng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
In-memory logic (IML)
magnetic tunnel junction (MTJ)
spin Hall effect (SHE)
voltage-controlled magnetic anisotropy (VCMA)
Novel Magnetic Tunneling Junction Memory Cell With Negative Capacitance-Amplified Voltage-Controlled Magnetic Anisotropy Effect
期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2017, 卷号: 64, 页码: 4919-4927
作者:
Zeng, Lang
;
Gao, Tianqi
;
Zhang, Deming
;
Peng, Shouzhong
;
Wang, Lezhi
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2019/12/30
High speed
low power
magnetic tunneling junction (MTJ)
negative capacitance
voltage-controlled magnetic anisotropy (VCMA)
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