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CORC

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Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: Vol.120, 页码: 313-318
作者:  Li, Yun;  Ma, Yao;  Lin, Wei;  Dong, Peng;  Yang, Zhimei
收藏  |  浏览/下载：17/0  |  提交时间：2019/02/25
Study of gamma-ray irradiation influence on TiN/HfO2/Si MOS capacitor by C-V and DLTS 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2018, 卷号: Vol.120, 页码: 313-318
作者:  Li, Yun;  Ma, Yao;  Lin, Wei;  Dong, Peng;  Yang, Zhimei
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/26
Understanding the role of TiN barrier layer on electrical performance of MOS device with ALD-TiN/ALD-TiAlC metal gate stacks 期刊论文
ECS Journal of Solid State Science and Technology, 2016
作者:  Xiang JJ(项金娟);  Li TT(李亭亭);  Wang XL(王晓磊);  Han K(韩锴);  Li JF(李俊峰)
收藏  |  浏览/下载：11/0  |  提交时间：2017/05/09
Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficientHfO(2)/TiN resistive switching memory cells 期刊论文
APPLIED PHYSICS LETTERS, 2015, 卷号: 107, 期号: 1
作者:  Jiang, Ran;  Wu, Zhengran;  Du, Xianghao;  Han, Zuyin;  Sun, Weideng
收藏  |  浏览/下载：8/0  |  提交时间：2019/12/17
Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells 期刊论文
Applied Physics Letters, 2015, 卷号: 107, 期号: 1
作者:  Jiang, Ran;  Wu, Zhengran;  Du, Xianghao;  Han, Zuyin;  Sun, Weideng
收藏  |  浏览/下载：1/0  |  提交时间：2019/12/17
Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficientHfO(2)/TiN resistive switching memory cells 期刊论文
Applied physics letters, 2015, 期号: 1, 页码: 013502-1-013502-4
作者:  Jiang, Ran;  Wu, Zhengran;  Du, Xianghao;  Han, Zuyin;  Sun, Weideng
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/17
Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting excellent NVM properties and ultra-low power operation 其他
2012-01-01
Wang, X.P.; Fang, Z.; Li, X.; Chen, B.; Gao, B.; Kang, J.F.; Chen, Z.X.; Kamath, A.; Shen, N.S.; Singh, N.; Lo, G.Q.; Kwong, D.L.
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/17
Complementary Metal Oxide Semiconductor Compatible Hf-Based Resistive Random Access Memory with Ultralow Switching Current/Power 期刊论文
日本应用物理学杂志, 2012
Zhang, Feifei; Li, Xiang; Gao, Bin; Chen, Bing; Huang, Peng; Fu, Yihan; Chen, Yuansha; Liu, Lifeng; Kang, Jinfeng; Singh, Navab; Lo Guo-Qiang; Kwong, Dim-Lee
收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13
LOW-POWER  RRAM  LAYER  
Rectifying characteristics and implementation of n-Si/HfO2 based devices for 1D1R-based cross-bar memory array 其他
2012-01-01
Zhang, F.F.; Huang, P.; Chen, B.; Yu, D.; Fu, Y.H.; Ma, L.; Gao, B.; Liu, L.F.; Liu, X.Y.; Kang, J.F.
收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13
Experimental investigation of the reliability issue of RRAM based on high resistance state conduction 期刊论文
nanotechnology, 2011
Zhang, Lijie; Hsu, Yen-Ya; Chen, Frederick T.; Lee, Heng-Yuan; Chen, Yu-Sheng; Chen, Wei-Su; Gu, Pei-Yi; Liu, Wen-Hsing; Wang, Shun-Min; Tsai, Chen-Han; Huang, Ru; Tsai, Ming-Jinn
收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10

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