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Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.
收藏  |  浏览/下载：13/0  |  提交时间：2021/10/15
Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.
收藏  |  浏览/下载：13/0  |  提交时间：2021/10/15
Tensile strain induced texture evolution in a Ni & ndash;Mo alloy with extremely fine nanotwinned columnar grains 期刊论文
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 2021, 卷号: 812, 页码: 11
作者:  Li, J. X.;  Shi, Y-N;  You, Z. S.;  Li, X. Y.
收藏  |  浏览/下载：12/0  |  提交时间：2021/10/15
Origination and evolution of point defects in AlN film annealed at high temperature 期刊论文
Journal of Luminescence, 2021, 卷号: 235
作者:  C. Kai;  H. Zang;  J. Ben;  K. Jiang;  Z. Shi
收藏  |  浏览/下载：5/0  |  提交时间：2022/06/13
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing 期刊论文
Applied Physics Letters, 2020, 卷号: 116, 期号: 25, 页码: 4
作者:  J. W. Ben,Z. M. Shi,H. Zang,X. J. Sun,X. K. Liu,W. Lu and D. B. Li
收藏  |  浏览/下载：2/0  |  提交时间：2021/07/06
Growth of high-quality AlN films on sapphire substrate by introducing voids through growth-mode modification 期刊论文
Applied Surface Science, 2020, 卷号: 518, 页码: 7
作者:  B. Tang,H. P. Hu,H. Wan,J. Zhao,L. Y. Gong,Y. Lei,Q. Zhao and S. J. Zhou
收藏  |  浏览/下载：2/0  |  提交时间：2021/07/06
Asymmetric cyclic response of tensile pre-deformed Cu with highly oriented nanoscale twins 期刊论文
ACTA MATERIALIA, 2019, 卷号: 175, 页码: 477-486
作者:  Pan, Qingsong;  Zhou, Haofei;  Lu, Qiuhong;  Gao, Huajian;  Lu, Lei
收藏  |  浏览/下载：54/0  |  提交时间：2021/02/02
Influence of Dislocations on the Refractive Index of AlN by Nanoscale Strain Field 期刊论文
Nanoscale Research Letters, 2019, 卷号: 14, 期号: 1
作者:  Li,Dabing;  Feng,Zhe Chuan;  Luo,Xuguang;  Wang,Yong;  Kai,Cuihong
收藏  |  浏览/下载：118/0  |  提交时间：2019/08/21
The substantial dislocation reduction by preferentially passivating etched defect pits in gan epitaxial growth 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Hu,Wei;  Die,Junhui;  Wang,Caiwei;  Yan,Shen;  Hu,Xiaotao
收藏  |  浏览/下载：145/0  |  提交时间：2019/05/09
High quality GaN buffer layer by isoelectronic doping and its application to 365 nm InGaN/AlGaN ultraviolet light-emitting diodes 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 471
作者:  Zhou, Shengjun;  Xu, Haohao;  Hu, Hongpo;  Gui, Chengqun;  Liu, Sheng
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/05

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