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Resonant cavity strained Group III-V photodetector and LED on silicon substrate and method to fabricate same 专利
专利号: US10135226, 申请日期: 2018-11-20, 公开日期: 2018-11-20
作者:  CHENG, CHENG-WEI;  LEOBANDUNG, EFFENDI;  LI, NING;  SADANA, DEVENDRA K.;  SHIU, KUEN-TING
收藏  |  浏览/下载:14/0  |  提交时间:2019/12/24
Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors 期刊论文
Nanoscale Research Letters, 2017
作者:  Wang GL(王桂磊);  Ye TC(叶甜春);  Henry Homayoun Radamson;  Zhao C(赵超);  Zhu HL(朱慧珑)
收藏  |  浏览/下载:12/0  |  提交时间:2018/07/05
Ultrathin homogeneous ni(al) germanosilicide layer formation on strained sige with al/ni multi-layers 期刊论文
Microelectronic engineering, 2015, 卷号: 137, 页码: 88-91
作者:  Liu, Linjie;  Jin, Lei;  Knoll, Lars;  Wirths, Stephan;  Buca, Dan
收藏  |  浏览/下载:41/0  |  提交时间:2019/05/10
High performance strained Si0.5Ge0.5 quantum-well p-MOSFETs fabricated using a high-kappa/metal-gate last process 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 83, 页码: 210-215
作者:  Liu, Chang[1];  Wen, Jiao[2];  Yu, Wenjie[3];  Zhang, Bo[4];  Xue, Zhongying[5]
收藏  |  浏览/下载:10/0  |  提交时间:2019/04/26
Integration of highly-strained SiGe materials in 14nm and beyond nodes FinFET technology 期刊论文
Solid-State Electronics, 2014
作者:  Li JF(李俊峰);  Wang GL(王桂磊);  Luo J(罗军);  Guo YL(郭奕栾);  Chen T(陈韬)
收藏  |  浏览/下载:6/0  |  提交时间:2015/04/24
能带改性Si基应变Ge材料的制备及其发光性质 学位论文
2014, 2014
黄诗浩
收藏  |  浏览/下载:6/0  |  提交时间:2016/01/12
Resonant cavity enhanced photoluminescence of tensile strained Ge/SiGe quantum wells on silicon-on-insulator substrate 期刊论文
http://dx.doi.org/10.1007/s11801-014-4021-y, 2014
Chen, Li-qun; Chen, Yang-hua; Li, Cheng; 李成
收藏  |  浏览/下载:2/0  |  提交时间:2015/07/22
Direct-bandgap electroluminescence from tensile-strained Ge/SiGe multiple quantum wells at room temperature 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 116103
He Chao; Liu Zhi; Zhang Xu; Huang Wen-Qi; Xue Chun-Lai; Cheng Bu-Wen
收藏  |  浏览/下载:13/0  |  提交时间:2015/03/20
Optimization of SiGe selective epitaxy for source/drain engineering 期刊论文
Journal of Applied Physics, 2013
作者:  M.Kolahdouz;  Wang GL(王桂磊);  M.Moeen;  A.Abedin;  Luo J(罗军)
收藏  |  浏览/下载:9/0  |  提交时间:2014/10/30
Fabrication of high quality strained SiGe on Si substrate by RPCVD 期刊论文
CHINESE SCIENCE BULLETIN, 2012, 卷号: 57, 期号: 15, 页码: 1862-1867
作者:  Xue, ZY;  Chen, D;  Liu, LJ;  Jiang, HT;  Bian, JT
收藏  |  浏览/下载:3/0  |  提交时间:2016/03/29


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