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氧化锌气敏机制的研究及传感器信号放大的应用
学位论文
: 中国科学院大学, 2019
作者:
周新愿
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  |  
浏览/下载:30/0
  |  
提交时间:2020/06/17
气体传感器,氧化锌,晶体缺陷,放大效应,微量挥发性有机物
Coulomb blockade correlations in a coupled single-electron device system
期刊论文
SOLID STATE COMMUNICATIONS, 2019, 卷号: 296
作者:
Cao, Limin
;
Altomare, Fabio
;
Guo, Hongli
;
Feng, Min
;
Chang, Albert M.
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  |  
浏览/下载:9/0
  |  
提交时间:2019/12/05
Single-electron transistor
Quantum dot
Coulomb blockade
Quantum tunneling
Single-electron transport through single and coupling dopant atoms in silicon junctionless nanowire transistor
期刊论文
Chin. Phys. B, 2019, 卷号: 28, 期号: 12, 页码: 127302
作者:
Xiao-Di Zhang
;
Wei-Hua Han
;
Wen Liu
;
Xiao-Song Zhao
;
Yang-Yan Guo
;
Chong Yang
;
Jun-Dong Chen
;
Fu-Hua Yang
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  |  
浏览/下载:10/0
  |  
提交时间:2020/08/05
High-performance FDTE-based polymer semiconductors with F center dot center dot center dot H intramolecular noncovalent interactions: Synthesis, characterization, and their field-effect properties
期刊论文
DYES AND PIGMENTS, 2018, 卷号: 149, 页码: 149-157
作者:
Zhang, Weifeng
;
Chen, Zhihui
;
Mao, Zupan
;
Gao, Dong
;
Wei, Congyuan
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  |  
浏览/下载:27/0
  |  
提交时间:2019/04/09
Dithienylethylene
Intramolecular Noncovalent Interaction
Fluorine Atom
Backbone Conformation
Polymer Field-effect Transistor
Paralleled GaN DHEMTs integrated cascode GaN switch for high-current applications
期刊论文
ELECTRONICS LETTERS, 2018, 卷号: 54, 页码: 899-900
作者:
Zhu, Tianhua
;
Zhuo, Fang
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  |  
浏览/下载:16/0
  |  
提交时间:2019/11/19
high-current applications
wire bonding
power density
avalanche-suppressed method
gallium compounds
GaN
integral package
lead bonding
single gate driver
field effect transistor switches
MOSFET
DHEMT integrated cascode switch
high electron mobility transistors
paralleled depletion-mode high-electron-mobility transistors
wide band gap semiconductors
cascode transistors
silicon-MOSFET
Si
potential unbalanced current sharing
cost reduction
optimised symmetric configuration
high-current cascode gallium nitride switch
III-V semiconductors
semiconductor device packaging
Switching Effects in Molecular Electronic Devices
期刊论文
TOPICS IN CURRENT CHEMISTRY, 2017
Liu, Zihao
;
Ren, Shizhao
;
Guo, Xuefeng
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浏览/下载:6/0
  |  
提交时间:2017/12/03
Molecular electronics
Device fabrication
Switching effects
FIELD-EFFECT-TRANSISTOR
NORBORNYLOGOUS BRIDGE MOLECULE
TRANSITION-METAL-COMPLEXES
WALLED CARBON NANOTUBES
CHARGE-TRANSPORT
CONTROLLED CONDUCTANCE
MONOLAYER TRANSISTORS
BREAK JUNCTIONS
SINGLE
PHOTO
Thermionic electron emission from single carbon nanostructures and its applications in vacuum nanoelectronics
期刊论文
MRS BULLETIN, 2017
Wei, Xianlong
;
Chen, Qing
;
Peng, Lian-Mao
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  |  
浏览/下载:4/0
  |  
提交时间:2017/12/03
ON/OFF CURRENT RATIO
WORK FUNCTION
FIELD
GRAPHENE
NANOTUBES
TEMPERATURE
TRANSISTOR
EMITTERS
DISPLAY
ARRAYS
High-Performance Ti-Doped Zinc Oxide TFTs With Double-Layer Gate Dielectric Fabricated at Low Temperature
期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Cui, Guodong
;
Han, Dedong
;
Cong, Yingying
;
Dong, Junchen
;
Yu, Wen
;
Zhang, Shengdong
;
Zhang, Xing
;
Wang, Yi
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2017/12/03
High performance
Ti-Zn-O (TiZO)
thin film transistor (TFT)
double-layer gate dielectric
THIN-FILM TRANSISTORS
Modeling Information Processing Using Nonidentical Coulomb Blockade Nanostructures
期刊论文
Molecular Architectonics, 2017, 页码: 45-68
作者:
José M. Claver
;
Javier Cervera
;
Salvador Mafé
收藏
  |  
浏览/下载:4/0
  |  
提交时间:2019/12/24
Nanoparticles
Coulomb
blockade
Single
electron
transistor
Variability
Information
processing
Three-Bladed Rylene Propellers with Three-Dimensional Network Assembly for Organic Electronics
期刊论文
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2016, 卷号: 138, 期号: 32, 页码: 10184-10190
作者:
Meng, Dong
;
Fu, Huiting
;
Xiao, Chengyi
;
Meng, Xiangyi
;
Winands, Thorsten
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  |  
浏览/下载:19/0
  |  
提交时间:2016/12/29
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