CORC

浏览/检索结果: 共125条,第1-10条 帮助

已选(0)清除 条数/页:   排序方式:
Low Contact Resistivity and Interfacial Behavior of p-Type NbFeSb/Mo Thermoelectric Junction 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 15, 页码: 14182
作者:  Shen, Jiajun;  Wang, Zhenyi;  Chu, Jing;  Bai, Shengqiang;  Zhao, Xinbing
收藏  |  浏览/下载:64/0  |  提交时间:2019/12/26
Devices with quantum dots 专利
专利号: US20190089129A1, 申请日期: 2019-03-21, 公开日期: 2019-03-21
作者:  LIANG, DI;  KURCZVEIL, GEZA;  BEAUSOLEIL, RAYMOND G.;  FIORENTINO, MARCO
收藏  |  浏览/下载:16/0  |  提交时间:2019/12/31
Conformal hexagonal-boron nitride dielectric interface for tungsten diselenide devices with improved mobility and thermal dissipation 期刊论文
NATURE COMMUNICATIONS, 2019, 卷号: 10, 页码: 11
作者:  Liu, Donghua;  Chen, Xiaosong;  Yan, Yaping;  Zhang, Zhongwei;  Jin, Zhepeng
收藏  |  浏览/下载:69/0  |  提交时间:2019/04/18
Adhesion Promoter Apparatus and Method 专利
专利号: US20190025514A1, 申请日期: 2019-01-24, 公开日期: 2019-01-24
作者:  TSENG, CHUN-HAO;  KUO, YING-HAO;  CHENG, KAI-FANG;  CHEN, HAI-CHING;  BAO, TIEN-I
收藏  |  浏览/下载:19/0  |  提交时间:2019/12/30
Interface engineering for two-dimensional semiconductor transistors 期刊论文
NANO TODAY, 2019, 卷号: 25
作者:  Jiang, Bei;  Yang, Zhenyu;  Liu, Xingqiang;  Liu, Yuan;  Liao, Lei
收藏  |  浏览/下载:50/0  |  提交时间:2019/12/05
Interface engineering for two-dimensional semiconductor transistors 期刊论文
Nano Today, 2019, 卷号: Vol.25, 页码: 122-134
作者:  Bei Jiang;  Zhenyu Yang;  Xingqiang Liu;  Yuan Liu;  Lei Liao
收藏  |  浏览/下载:43/0  |  提交时间:2019/12/13
Interface engineering for two-dimensional semiconductor transistors 期刊论文
NANO TODAY, 2019, 卷号: Vol.25, 页码: 122-134
作者:  Jiang, B;  Yang, ZY;  Liu, XQ;  Liu, Y;  Liao, L
收藏  |  浏览/下载:6/0  |  提交时间:2019/12/17
Investigation of dipole origin at high k dielectric hetero-junction interface 期刊论文
49th IEEE Semiconductor, 2018
作者:  Ye TC(叶甜春);  Wang WW(王文武);  Zhou LX(周丽星);  Wang XL(王晓磊);  Xiang JJ(项金娟)
收藏  |  浏览/下载:29/0  |  提交时间:2019/05/20
一种半导体器件的制造方法 专利
专利号: US10115804, 申请日期: 2018-10-30, 公开日期: 2015-11-12
作者:  王桂磊;  李俊峰;  刘金彪;  赵超
收藏  |  浏览/下载:22/0  |  提交时间:2019/03/27
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载:65/0  |  提交时间:2019/06/10


©版权所有 ©2017 CSpace - Powered by CSpace