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科研机构
兰州理工大学 [3]
金属研究所 [3]
过程工程研究所 [1]
内容类型
期刊论文 [6]
会议论文 [1]
发表日期
2020 [7]
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Interfacial Pd-O-Ce Linkage Enhancement Boosting Formic Acid Electrooxidation
期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2020, 卷号: 12, 期号: 41, 页码: 47065-47075
作者:
Zhou, Yang
;
Liu, Danye
;
Liu, Zong
;
Feng, Ligang
;
Yang, Jun
收藏
  |  
浏览/下载:10/0
  |  
提交时间:2021/03/29
formic acid
electrooxidation
oxygen vacancies
palladium
interaction
The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations
期刊论文
JOURNAL OF APPLIED PHYSICS, 2020, 卷号: 127, 期号: 9, 页码: 6
作者:
Tian, X. H.
;
Wang, Y. J.
;
Tang, Y. L.
;
Zhu, Y. L.
;
Ma, X. L.
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2021/02/02
The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations
期刊论文
JOURNAL OF APPLIED PHYSICS, 2020, 卷号: 127, 期号: 9, 页码: 6
作者:
Tian, X. H.
;
Wang, Y. J.
;
Tang, Y. L.
;
Zhu, Y. L.
;
Ma, X. L.
收藏
  |  
浏览/下载:7/0
  |  
提交时间:2021/02/02
The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations
期刊论文
Journal of Applied Physics, 2020, 卷号: 127, 期号: 9
作者:
Tian, X.H.
;
Wang, Y.J.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Ma, X.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/14
Bismuth compounds
Domain walls
Ferroelectric materials
Iron compounds
Oxygen
Plates (structural components)
BiFeO3 thin film
Charged domain wall
Complex pattern
Domain structure
Effect of oxygen
Phase-field simulation
Transition behavior
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
ACTA MATERIALIA, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W. R.
;
Tian, X. H.
;
Jiang, Y. X.
;
Zhu, Y. L.
;
Tang, Y. L.
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  |  
浏览/下载:8/0
  |  
提交时间:2021/02/02
BiFeO3 films
Oxygen vacancy plates
Charged domain wall pinning
Aberration-corrected scanning transmission electron microscopies
Phase field simulations
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
Acta Materialia, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/14
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
Transmissions
Aberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
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