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浏览/检索结果: 共3条，第1-3条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits 期刊论文 IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2019, 卷号: 27, 期号: 1, 页码: 159-172 作者:  Chen, Xiaoming;  Niemier, Michael;  Hu, Xiaobo Sharon;  Yin, Xunzhao 收藏  |  浏览/下载：70/0  |  提交时间：2019/04/03 Ferroelectric FET (FeFET)  logic-in-memory (LiM)  nonvolatile (NV) memory   A Novel MTJ-Based Non-Volatile Ternary Content-Addressable Memory for High-Speed, Low-Power, and High-Reliable Search Operation 期刊论文 IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2019, 卷号: 66, 页码: 1454-1464 作者:  Wang, Chengzhi;  Zhang, Deming;  Zeng, Lang;  Deng, Erya;  Chen, Jie 收藏  |  浏览/下载：8/0  |  提交时间：2019/12/30 MTJ  NV-TCAM  search reliability  ultra-low power  search delay  144-bit word circuit   A Novel 15T-4MTJ based Non-volatile Ternary Content-Addressable Memory Cell for High-Speed, Low-Power and High-Reliable Search Operation 会议论文 2018 IEEE ASIA PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS (APCCAS 2018), 2018-01-01 作者:  Wang, Chengzhi;  Zhang, Deming;  Zeng, Lang;  Chen, Jie;  Zhao, Weisheng 收藏  |  浏览/下载：19/0  |  提交时间：2019/12/30 Magnetic Tunnel Junction (MTJ)  Non-volatile Ternary Content-addressable memory (NV-TCAM)