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Existence of bipolar resistive switching with self-rectifying behavior in a p-CuCrO2/n-Si heterostructure
期刊论文
THIN SOLID FILMS, 2022, 卷号: 762
作者:
Cheng, Wangping
;
Li, Chenhui
;
Zhou, Chen
;
He, Yuandi
;
Wei, Renhuai
收藏
  |  
浏览/下载:15/0
  |  
提交时间:2022/12/23
Resistive random access memory
Resistive switching
Self-rectifying behavior
Copper chromium oxide
Thin film
Solution deposition
A high-performance photodetector based on small-bundled single-wall carbon nanotube film/silicon heterojunctions
期刊论文
JOURNAL OF MATERIALS CHEMISTRY A, 2022, 页码: 9
作者:
Zhao, Yi-Ming
;
Hu, Xian-Gang
;
Shi, Chao
;
Ding, Wu-Tong
;
Hou, Peng-Xiang
收藏
  |  
浏览/下载:44/0
  |  
提交时间:2022/09/16
Electrical tailoring of the photoluminescence of silicon-vacancy centers in diamond/silicon heterojunctions
期刊论文
JOURNAL OF MATERIALS CHEMISTRY C, 2022, 页码: 10
作者:
Guo, Xiaokun
;
Yang, Bing
;
Lu, Jiaqi
;
Li, Haining
;
Huang, Nan
收藏
  |  
浏览/下载:32/0
  |  
提交时间:2022/07/14
Direct Growth of 1D SWCNT/2D MoS2 Mixed-Dimensional Heterostructures and Their Charge Transfer Property
期刊论文
ACTA PHYSICO-CHIMICA SINICA, 2022, 卷号: 38, 期号: 5, 页码: 8
作者:
Zou, Jingyun
;
Gao, Bing
;
Zhang, Xiaopin
;
Tang, Lei
;
Feng, Simin
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  |  
浏览/下载:72/0
  |  
提交时间:2022/01/27
Single-walled carbon nanotube
Molybdenum disulfide
Dimension
Heterostructure
Charge transfer
Structure stability, electronic property and voltage profile of LiFe1−nNnP1−mM mO4 olivine cathode material
期刊论文
Rare Metals, 2021, 卷号: 40, 期号: 12, 页码: 3512-3519
作者:
Cui, Zhi-Hong
;
Lu, Xue-Feng
;
Luo, Jian-Hua
;
Guo, Xin
;
Xue, Hong-Tao
收藏
  |  
浏览/下载:20/0
  |  
提交时间:2022/02/17
Cathodes
Computation theory
Density functional theory
Electronic properties
Energy gap
Silicate minerals
Silicon
Stability
Charge density difference
Computational studies
Electrode material
Lithium Intercalation
N-type semiconductors
P type semiconductor
Structural stabilities
Structure stability
Turning electronic performance and Schottky barrier of graphene/β-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
Vacuum, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
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  |  
浏览/下载:8/0
  |  
提交时间:2021/06/03
Optoelectronic devices
Schottky barrier diodes
Van der Waals forces
Electronic performance
Electronics devices
External strains
First principle calculations
Optoelectronics devices
P-type
Schottky barriers
Schottky contacts
Si$-3$/N$-4$
Van der Waal
Recent Advances in the Applications of Elemental Two-dimensional Materials and Their Derivatives Serving as Transport Layers in Solar Cells
期刊论文
Gaodeng Xuexiao Huaxue Xuebao/Chemical Journal of Chinese Universities, 2021, 卷号: 42, 期号: 2, 页码: 412-431
作者:
S. Lin
;
N. Fu and Q. Bao
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  |  
浏览/下载:2/0
  |  
提交时间:2022/06/13
A Charge Density Model of Silicon-nanowire GAA MOSFET Incoroperating the Source-drian Tunneling Effect for IC Design
会议论文
Guilin, China, June 4-6, 2021
作者:
Cheng H(程贺)
;
Zhang C(张超)
;
Liu TF(刘铁锋)
;
Xie C(谢闯)
;
Yang ZJ(杨志家)
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2022/02/04
ballistic transport
compact model
integrated-cricuit design
sub-7 nm GAA MOSFET
the source-drain tunneling
Turning electronic performance and Schottky barrier of graphene/beta-Si3N4 (0001) heterostructure by external strain and electric field
期刊论文
VACUUM, 2021, 卷号: 188
作者:
Lu, Xuefeng
;
Li, Lingxia
;
Luo, Jianhua
;
Guo, Xin
;
Ren, Junqiang
收藏
  |  
浏览/下载:18/0
  |  
提交时间:2021/06/03
Effects of doping graphene on the performance of graphene-silicon hybrid photoconductive detectors
期刊论文
NANOTECHNOLOGY, 2020, 卷号: 31, 期号: 48, 页码: 9
作者:
Fu, JinTao
;
Que, Longcheng
;
Jiang, Hao
;
Luo, Wei
;
Nie, Changbin
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2020/12/01
graphene film
photoconductive detector
doping effects
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