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CORC

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Transforming a Two-Dimensional Layered Insulator into a Semiconductor or a Highly Conductive Metal through Transition Metal Ion Intercalation 期刊论文
CHINESE PHYSICS LETTERS, 2021, 卷号: 38
作者:  Yan, Xiu;  Zhen, Wei-Li;  Weng, Shi-Rui;  Zhang, Ran-Ran;  Zhu, Wen-Ka
收藏  |  浏览/下载：21/0  |  提交时间：2021/08/31
Nonvolatile Control of the Electronic Properties of In2-xCrxO3 Semiconductor Films by Ferroelectric Polarization Charge 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2019, 卷号: 11, 期号: 35, 页码: 32449
作者:  Xu, Meng;  Yan, Jian-Min;  Guo, Lei;  Wang, Hui;  Xu, Zhi-Xue
收藏  |  浏览/下载：69/0  |  提交时间：2019/12/26
Enhancement of Anomalous Hall Effect via Interfacial Scattering in Metal‐Organic Semiconductor Fex1−x Granular Films Near the Metal‐Insulator Transition. 期刊论文
Advanced Functional Materials, 2019, 卷号: Vol.29 No.36
作者:  Zheng, Lingcheng
收藏  |  浏览/下载：35/0  |  提交时间：2019/11/21
Tunable metal-insulator transition, Rashba effect and Weyl Fermions in a relativistic charge-ordered ferroelectric oxide 期刊论文
NATURE COMMUNICATIONS, 2018, 卷号: 9, 页码: -
作者:  He, JG;  Di Sante, D;  Li, RH;  Chen, XQ;  Rondinelli, JM
收藏  |  浏览/下载：25/0  |  提交时间：2018/06/05
Characterization of Transient Threshold Voltage Shifts in Enhancement-and Depletion-mode AlGaN/GaN Metal-Insulator-Semiconductor (MIS)-HEMTs 会议论文
作者:  Cui, Miao;  Cai, Yutao;  Lam, Sang;  Liu, Wen;  Zhao, Chun
收藏  |  浏览/下载：5/0  |  提交时间：2019/11/26
Annealing effect on the bipolar resistive switching characteristics of a Ti-Si3N4-n-GaN MIS device 期刊论文
Journal of Alloys and Compounds, 2018, 卷号: 740, 页码: 816-822
作者:  Chen, Y. R.;  Li, Z. M.;  Zhang, Z. W.;  Hu, L. Q.;  Jiang, H.
收藏  |  浏览/下载：6/0  |  提交时间：2019/09/17
Detuned multiple plasmon-induced transparency with asymmetric gear-shaped ring resonators (EI收录) 期刊论文
Optik, 2017, 卷号: 140, 页码: 1038-1046
作者:  Niu, Yuying[1];  Wang, Jicheng[1,2];  Liu, Dongdong[3];  Hu, Zheng-Da[1];  Sang, Tian[1]
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24
Quasi-One-Dimensional Metal-Insulator Transitions in Compound Semiconductor Surfaces 期刊论文
PHYSICAL REVIEW LETTERS, 2016, 卷号: 117, 期号: 11
作者:  Zanolli, Z.;  Fan, J.;  Yang, X. B.;  Tong, S. Y.;  Xu, H.
收藏  |  浏览/下载：9/0  |  提交时间：2019/06/20
Realization of nitride-oxide based p-n heterojunctions with the n-VO2/p-GaN/sapphire structure 期刊论文
MATERIALS RESEARCH BULLETIN, 2016, 卷号: 77, 页码: 199-204
作者:  Li, Xiaoxuan;  Bian, Jiming;  Wang, Minhuan;  Miao, Lihua;  Liu, Hongzhu
收藏  |  浏览/下载：45/0  |  提交时间：2017/02/27
Growth and characterization of VO2/p-GaN/sapphire heterostructure with phase transition properties 期刊论文
APPLIED SURFACE SCIENCE, 2015, 卷号: 357, 页码: 282-286
作者:  Bian, Jiming;  Wang, Minhuan;  Miao, Lihua;  Li, Xiaoxuan;  Luo, Yingmin
收藏  |  浏览/下载：23/0  |  提交时间：2017/03/01

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