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Effect of strain relaxation on performance of InGaN/GaN green LEDs on 4-inch 期刊论文
Scientific Reports, 2019, 卷号: 9, 期号: 9
作者:  H.P.Hu;  S.J.Zhou;  H.Wan;  X.T.Liu;  N.Li
收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24
Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
VACUUM, 2016, 卷号: 129
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：17/0  |  提交时间：2017/03/11
Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681
作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/11
Improved Hole Transport by p-InxGa1-xN Layer in Multiple Quantum Wells of Visible LEDs 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2013, 卷号: 25, 期号: 18, 页码: 1789-1792
作者:  Liu, JP(刘建平)
收藏  |  浏览/下载：19/0  |  提交时间：2014/01/13
Different strain relief behaviors in Al0.35Ga0.65N/GaN multiple quantum wells on GaN/Sapphire templates with AlN/GaN supperlattices and low-temperature AlN interlayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2012, 卷号: 111, 期号: 1
作者:  Huang, CC;  Xu, FJ;  Song, J;  Xu, ZY;  Wang, JM
收藏  |  浏览/下载：11/0  |  提交时间：2013/03/18
Optimizing features of photorefractive devices by tailoring native defects incorporated in the GaAs/AlGaAs multiple quantum wells 期刊论文
COMMAD 2000 PROCEEDINGS, 2000, 页码: 430
Han, YJ; Guo, LW; Bao, CL; Huang, Q; Zhou, JM
收藏  |  浏览/下载：8/0  |  提交时间：2013/09/24
GAAS  LAYERS  
Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359
Zhang MH; Han YJ; Zhang YH; Huang Q; Bao CL; Wang WX; Zhou JM; Lu LW
收藏  |  浏览/下载：67/0  |  提交时间：2010/08/12
Photoluminescence of low-temperature AlGaAs/GaAs multiple quantum wells 期刊论文
JOURNAL OF CRYSTAL GROWTH, 1997, 卷号: 175, 页码: 1173
Feng, W; Chen, F; Huang, Q; Zhou, JM
收藏  |  浏览/下载：9/0  |  提交时间：2013/09/24
Effect of thermal annealing on optical emission properties of low-temperature grown AlGaAs/GaAs multiple quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 1996, 卷号: 69, 期号: 23, 页码: 3513
Feng, W; Chen, F; Wang, WX; Cheng, WQ; Yu, Y; Huang, Q; Zhou, JM
收藏  |  浏览/下载：10/0  |  提交时间：2013/09/17

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