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CORC

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Intercalated architecture of MA(2)Z(4) family layered van der Waals materials with emerging topological, magnetic and superconducting properties 期刊论文
NATURE COMMUNICATIONS, 2021, 卷号: 12, 期号: 1, 页码: 10
作者:  Wang, Lei;  Shi, Yongpeng;  Liu, Mingfeng;  Zhang, Ao;  Hong, Yi-Lun
收藏  |  浏览/下载：26/0  |  提交时间：2021/10/15
Thermoelectric performance of monolayer InSe improved by convergence of multivalley bands 期刊论文
JOURNAL OF APPLIED PHYSICS, 2019, 卷号: 125, 期号: 8, 页码: 8
作者:  Hung, Nguyen T.;  Nugraha, Ahmad R. T.;  Yang, Teng;  Zhang, Zhidong;  Saito, Riichiro
收藏  |  浏览/下载：11/0  |  提交时间：2021/02/02
High selectivity n-type InSe monolayer toward decomposition products of sulfur hexafluoride: A density functional theory study 期刊论文
APPLIED SURFACE SCIENCE, 2019, 卷号: 479
作者:  Chen, Dachang;  Zhang, Xiaoxing;  Cui, Hao;  Tang, Ju;  Pi, Shoumiao
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/05
High selectivity n-type InSe monolayer toward decomposition products of sulfur hexafluoride: A density functional theory study 期刊论文
Applied Surface Science, 2019, 卷号: 479
作者:  Chen, Dachang;  Zhang, Xiaoxing;  Cui, Hao;  Tang, Ju;  Pi, Shoumiao
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/05
Current-induced spin polarization in monolayer InSe 期刊论文
PHYSICAL REVIEW B, 2019, 卷号: 100, 期号: 24, 页码: 245409
作者:  Ma Zhou ;   Shengbin Yu;   Wen Yang;   Wen-kai Lou ;   Fang Cheng;   Dong Zhang;   Kai Chang
收藏  |  浏览/下载：19/0  |  提交时间：2020/07/31
The role of the intrinsic Se and In vacancies in the interaction of O-2 and H2O molecules with the InSe monolayer 期刊论文
APPLIED SURFACE SCIENCE, 2018, 卷号: 434, 页码: 215-227
作者:  Ma, Dongwei[1];  Li, Tingxian[2];  Yuan, Di[3];  He, Chaozheng[4];  Lu, Zhiwen[5]
收藏  |  浏览/下载：12/0  |  提交时间：2019/12/23
Many-body Effect and Device Performance Limit of Monolayer InSe 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2018, 卷号: Vol.10 No.27, 页码: 23344-23352
作者:  Yangyang Wang;  Ruixiang Fei;  Ruge Quhe;  Jingzhen Li;  Han Zhang
收藏  |  浏览/下载：6/0  |  提交时间：2019/12/26
Ultrathin SnSe2 Flakes Grown by Chemical Vapor Deposition for High-Performance Photodetectors 期刊论文
ADVANCED MATERIALS, 2015, 卷号: 27, 期号: 48, 页码: 8035-8041
作者:  Zhou, Xing;  Gan, Lin;  Tian, Wenming;  Zhang, Qi;  Jin, Shengye
收藏  |  浏览/下载：23/0  |  提交时间：2019/06/20
n-Type Ohmic contact and p-type Schottky contact of monolayer InSe transistors 会议论文
PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 24641-24651, 2018
作者:  Shi, Bowen;  Wang, Yangyang;  Li, Jingzhen
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/25

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