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CORC

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Ultrathin flexible InGaZnO transistor for implementing multiple functions with a very small circuit footprint 期刊论文
NANO RESEARCH, 2020, 卷号: 14, 期号: 1, 页码: 232-238
作者:  Dai, Chaoqi;  Chen, Peiqin;  Qi, Shaocheng;  Hu, Yongbin;  Song, Zhitang
收藏  |  浏览/下载：4/0  |  提交时间：2020/12/16
High-Performance InGaZnO-Based ReRAMs 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2019, 卷号: 66, 期号: 6, 页码: 2600-2605
作者:  Ma, Pengfei;  Liang, Guangda;  Wang, Yiming;  Li, Yunpeng;  Xin, Qian
收藏  |  浏览/下载：39/0  |  提交时间：2019/12/11
Oxygen partial pressure ratio modulated electrical performance of amorphous InGaZnO thin film transistor and inverter 期刊论文
Journal of Alloys and Compounds, 2018
作者:  Q.B. Lin;  C. Zhang;  G. He;  B. Yang;  L. Zhu
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Oxide-Based Complementary Inverters With High Gain and Nanowatt Power Consumption 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 11, 页码: 1676-1679
作者:  Yuan, Yuzhuo;  Yang, Jin;  Hu, Zhenjia;  Li, Yunpeng;  Du, Lulu
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11
High-Performance Flexible Schottky Diodes Based on Sputtered InGaZnO 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 卷号: 65, 期号: 10, 页码: 4326-4333
作者:  Du, Lulu;  Zhang, Jiawei;  Li, Yunpeng;  Xu, Mingsheng;  Wang, Qingpu
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/11
All-Oxide-Semiconductor-Based Thin-Film Complementary Static Random Access Memory 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 12, 页码: 1876-1879
作者:  Yang, Jin;  Yuan, Yuzhuo;  Li, Yunpeng;  Du, Lulu;  Wang, Yiming
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/11
Highly Optimized Complementary Inverters Based on p-SnO and n-InGaZnO With High Uniformity 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2018, 卷号: 39, 期号: 4, 页码: 516-519
作者:  Yang, Jin;  Wang, Yiming;  Li, Yunpeng;  Yuan, Yuzhuo;  Hu, Zhenjia
收藏  |  浏览/下载：11/0  |  提交时间：2019/12/11
Oxygen Interstitial Creation in a-IGZO Thin-Film Transistors Under Positive Gate-Bias Stress 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2017
Zhou, Xiaoliang; Shao, Yang; Zhang, Letao; Lu, Huiling; He, Hongyu; Han, Dedong; Wang, Yi; Zhang, Shengdong
收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03
Source-drain resistance characteristics of back-channel etched amorphous InGaZnO thin film transistors with TiO2:Nb protective layer 期刊论文
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017
Zhang, Letao; Zhou, Xiaoliang; Chang, Baozhu; Wang, Longyan; Xiao, Yuxiang; He, Hongyu; Zhang, Shengdong
收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03
Investigating degradation behaviors induced by mobile Cu ions under high temperature negative bias stress in a-InGaZnO thin film transistors 期刊论文
APPLIED PHYSICS LETTERS, 2017
Chiang, Hsiao-Cheng; Chang, Ting-Chang; Liao, Po-Yung; Chen, Bo-Wei; Tsao, Yu-Ching; Tsai, Tsung-Ming; Chien, Yu-Chieh; Yang, Yi-Chieh; Chen, Kuan-Fu; Yang, Chung-I; Hung, Yu-Ju; Chang, Kuan-Chang; Zhang, Sheng-Dong; Lin, Sung-Chun; Yeh, Cheng-Yen
收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03

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