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浏览/检索结果: 共2条，第1-2条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：36/0  |  提交时间：2014/05/15 Response spectrum 0.9-2.65 m of In0.82Ga0.18As detectors by two-step growth technique (EI CONFERENCE) 会议论文 2012 International Conference on Material Sciences and Manufacturing Technology, ICMSMT 2012, October 5, 2012 - October 6, 2012, Dalian, China Zhang T.; Miao G.; Fu J.; Ban D.; Shen Z.; Lin H.; Zou X.; Peng H. 收藏  |  浏览/下载：20/0  |  提交时间：2013/03/25 InP/In0.82Ga0.18As/InP heterostructure used for infrared detector were grown on (100) S-doped InP substrates using two-step growth technique by low temperature metal-organic chemical vapor deposition. The growth was performed using TMIn  TMGa  AsH3  and PH3 as growth precursors in a horizontal reactor. The substrates on a graphite susceptor were heated by inductively coupling RF power  their temperatures were detected by a thermocouple  and the reactor pressure was kept at 10000 Pa. The growth structure of detector included In0.82Ga0.18As buffer with the thickness of 100 nm  In0.82Ga0.18As absorption layer with the thickness of 2.8 m  and the InP cap with the thickness of 0.8 m. The planar type of p-i-n detector was fabricated by Zn diffusion. The properties of In0.82Ga0.18As detector were studied  the curves of the I-V characteristics  the range of response spectrum  and the detectivity (D*) were obtained. (2013) Trans Tech Publications  Switzerland.