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浏览/检索结果: 共9条，第1-9条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 ESD Reliability Improvement of the 0.25-mu m 60-V Power nLDMOS with Discrete Embedded SCRs Separated by STI Structures 其他 2016-01-01 Chen, Shen-Li; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun; Chen, Hung-Wei 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Electrostatic discharge (ESD)  N-channel lateral-diffused MOSFET (nLDMOS)  Secondary breakdown current (I-t2)  Shallow-trench isolation (STI)  Silicon-controller rectifier (SCR)   ESD Reliability Evaluations of the 60-V nLDMOS by the Drain-side Discrete SCRs 其他 2016-01-01 Chen, Shen-Li; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 LDMOS   ESD-Reliability Characterizations of a 45-V p-Channel LDMOS-SCR with the Discrete-Cathode End 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung; Yen, Chih-Ying; Chen, Kuei-Jyun 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 P-type laterally-diffused metal oxide semiconductor (pLDMOS)  Electrostatic Discharge (ESD)  Holding voltage (V-h)  Secondary breakdown current (I-t2)   FSD Protection Design for the 45-V pLDMOS-SCR (p-n-p-Arranged) Devices with Source-Discrete Distributions 其他 2016-01-01 Chen, Shen-Li; Huang, Yu-Ting; Yen, Chih-Ying; Chen, Kuei-Jyun; Wu, Yi-Cih; Lin, Jia-Ming; Yang, Chih-Hung 收藏  |  浏览/下载：6/0  |  提交时间：2017/12/03 Electrostatic-discharge (ESD)  Holding voltage (V-h)  p-channel lateral-diffused MOSFET (pLDMOS)  Secondary breakdown-current (I-1/2)  Silicon controlled rectifier (SCR)  Trigger Voltage (V-t1)   Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015 Hu, Zhijin; Liao, Congwei; Li, Wenjie; Zeng, Limei; Lee, Chang-Yeh; Zhang, Shengdong 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 Amorphous silicon (a-Si)  bipolar pulse  gate driver  lifetime  threshold voltage shift (Delta V-TH)  THIN-FILM TRANSISTORS  AMORPHOUS-SILICON TECHNOLOGY  LCD APPLICATION  DESIGN  CIRCUITS  STRESS   Double Snapback Phenomena in Transient Power-rail ESD Clamp Circuits for Latch-up Free Concerns 其他 2015-01-01 Lu, Guangyi; Wang, Yuan; Zhang, Xing 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 DESIGN   Implementation of an a-Si:H TFT Gate Driver Using a Five-Transistor Integrated Approach 期刊论文 ieee电子器件汇刊, 2012 Liao, Congwei; He, Changde; Chen, Tao; Dai, David; Chung, Smart; Jen, T. S.; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/12 Amorphous silicon  gate driver  multiple-phase clocks  thin-film transistors (TFTs)  threshold-voltage shift  THIN-FILM TRANSISTORS  AMORPHOUS-SILICON TFTS  CIRCUITS  DESIGN  STRESS   Tetrahydroberberine suppresses dopamine-induced potassium current in acutely dissociated CA1 pyramidal neurons from rat hippocampus 期刊论文 NEUROSCIENCE LETTERS, 1996, 卷号: 207, 期号: 3, 页码: 155-158 作者:  Wu, J;  Jin, GZ 收藏  |  浏览/下载：10/0  |  提交时间：2019/01/08 tetrahydroberberine  dopamine  K+ current  rat hippocampus  dissociated neurons  patch-clamp   Dopamine-induced ionic currents in acutely dissociated rat neurons of CNS 期刊论文 ACTA PHARMACOLOGICA SINICA, 1996, 卷号: 17, 期号: 1, 页码: 23-& 作者:  Wu, J;  Chen, PX;  Jin, GZ 收藏  |  浏览/下载：6/0  |  提交时间：2019/01/08 dopamine  potassium channels  hippocampus  pyramidal cells  patch-clamp techniques