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Nitrogen-concentration modulated interface quality, band alignment and electrical properties of HfTiON/Ge gate stack pretreated by trimethylaluminum precursor 期刊论文
Materials Research Bulletin, 2017, 卷号: Vol.91, 页码: 166-172
作者:  Lv,J. G.;  Xiao,D. Q.;  Cheng,C.;  Sun,Z. Q.;  Gao,J.
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate Dielectric 期刊论文
IEEE Transactions on Electron Devices, 2015, 卷号: 62, 期号: 4, 页码: 1235-1240
作者:  Wang, Li-Sheng*;  Xu, Jing-Ping;  Liu, Lu;  Lu, Han-Han;  Lai, Pui-To
收藏  |  浏览/下载：7/0  |  提交时间：2019/12/04
Determination of optical constant and electrical properties of sputtering-derived HfTiON gate dielectrics 期刊论文
Journal of Alloys and Compounds, 2015, 卷号: Vol.646, 页码: 10-15
作者:  Z.Q. Sun;  H.S. Chen;  Y.M. Liu;  J.W. Zhang;  P.H. Wang
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22
Electrical properties of HfTiON gate-dielectric GaAs metal-oxide- semiconductor capacitor with AlON as interlayer 期刊论文
IEEE Transactions on Electron Devices, 2014, 卷号: 61, 期号: 3, 页码: 742-746
作者:  Wang, Li-Sheng*;  Liu, Lu;  Xu, Jing-Ping;  Zhu, Shu-Yan;  Huang, Yuan
收藏  |  浏览/下载：5/0  |  提交时间：2019/12/04
Nitrided HfTiON/Ga2O3(Gd2O3) as stacked gate dielectric for GaAs MOS applications 期刊论文
Applied Physics Express, 2014, 卷号: 7, 期号: 6, 页码: 061201-
作者:  Wang, Li-Sheng;  Xu, Jing-Ping*;  Liu, Lu;  Tang, Wing-Man;  Lai, Pui-To
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/04
Improved interfacial and electrical properties of GaAs metal-oxide- semiconductor capacitors with HfTiON as gate dielectric and TaON as passivation interlayer 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 9
作者:  Wang, L.S.;  Xu, J.P.;  Zhu, S.Y.;  Huang, Y.;  Lai, P.T.
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/04
Composition dependence of interface control and optimization on the performance of an HfTiON gate dielectric metal-oxide-semiconductor capacitor 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 10
作者:  He, G;  Sun, ZQ;  Ma, YQ;  Wu, MZ;  Liu, YM
收藏  |  浏览/下载：10/0  |  提交时间：2012/07/10
Interfacial, optical properties and band offsets of HfTiON thin films with different nitrogen concentrations 期刊论文
journal of applied physics, 2011, 卷号: 110, 期号: 2
作者:  Fang, Q
收藏  |  浏览/下载：8/0  |  提交时间：2012/07/11
Nitrogen dependence of band alignment and electrical properties of HfTiON gate dielectrics metal-oxide-semiconductor capacitor 期刊论文
Applied Physics Letters, 2010, 卷号: Vol.97 No.19, 页码: 192902
作者:  He,G;  Zhang,LD;  Liu,M;  Sun,ZQ
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/22
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