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浏览/检索结果: 共12条，第1-10条 帮助 已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文 ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9 作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang 收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10 electrical properties  forming gas annealing  high-k gate dielectrics  interface chemistry  metal-oxide-semiconductor capacitors   Solution-processed HfGdO gate dielectric thin films for CMOS application: Effect of annealing temperature 期刊论文 Journal of Alloys and Compounds, 2018, 卷号: Vol.731, 页码: 150-155 作者:  Li,WD He,G Zheng,CY Liang,S Zhu,L Jiang,SS 收藏  |  浏览/下载：8/0  |  提交时间：2019/04/22 ELECTRICAL-PROPERTIES  BAND ALIGNMENT  INTERFACE  OXIDES  STACK  MODULATION   Analysis of the electrical properties and current transportation mechanism of a metal oxide semiconductor (MOS) capacitor based on HfGdO gate dielectrics 期刊论文 Journal of Alloys and Compounds, 2018, 卷号: Vol.757, 页码: 288-297 作者:  J.G. Lv;  Y.M. Liu;  P.H. Wang;  S.S. Jiang;  G. He 收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22 High-k  gate  dielectrics  HfGdO  Electrical  properties  Metal  oxide  semiconductor  transistors  Leakage  current  density   Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文 Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4 作者:  Wendong Li;  Shuang Liang;  Li Zhu;  Mao Liu;  Mingliang Tian 收藏  |  浏览/下载：44/0  |  提交时间：2019/04/22 electrical  properties  forming  gas  annealing  high‐k  gate  dielectrics  interface  chemistry  metal‐oxide‐semiconductor  capacitors   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 704, 期号: 无, 页码: 322-328 作者:  Jiang, S. S.;  He, G.;  Liang, S.;  Zhu, L.;  Li, W. D. 收藏  |  浏览/下载：20/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Chemistry  Xps Electrical Properties  Cmos Devices   Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2017, 卷号: 695, 期号: 无, 页码: 2199-2206 作者:  Gao, J.;  He, G.;  Fang, Z. B.;  Lv, J. G.;  Liu, M. 收藏  |  浏览/下载：16/0  |  提交时间：2018/07/04 High-k Gate Dielectrics  Interface Quality  Band Alignment  Electrical Properties  Leakage Current Mechanism   Interface quality modulation, band alignment modification and optimization of electrical properties of HfGdO/Ge gate stacks by nitrogen incorporation 期刊论文 Journal of Alloys and Compounds, 2017, 卷号: Vol.695, 页码: 2199-2206 作者:  Lv,J. G.;  Fang,Z. B.;  Sun,Z. Q.;  Liu,M.;  Gao,J. 收藏  |  浏览/下载：9/0  |  提交时间：2019/04/22 OXIDES  DIELECTRICS  TRANSISTORS  DEPENDENCE  CHEMISTRY  HFO2   Modulation of interfacial and electrical properties of HfGdO/GaAs gate stacks by ammonium sulfide passivation and rapid thermal annealing 期刊论文 Journal of Alloys and Compounds, 2017, 卷号: Vol.704, 页码: 322-328 作者:  Lv,J. G.;  Li,W. D.;  Zheng,C. Y.;  Zhu,L.;  Liang,S. 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/22 ATOMIC LAYER DEPOSITION  BAND ALIGNMENT  HFO2  GAAS  DIELECTRICS  FILMS  GD   Evolution of interface chemistry and dielectric properties of HfO2/Ge gate stack modulated by Gd incorporation and thermal annealing 期刊论文 AIP ADVANCES, 2016, 卷号: 6, 期号: 2, 页码: 1-7 作者:  He, Gang;  Zhang, Jiwen;  Sun, Zhaoqi;  Lv, Jianguo;  Chen, Hanshuang 收藏  |  浏览/下载：8/0  |  提交时间：2017/09/15 Current mechanism and band alignment of Al (Pt)/HfGdO/Ge capacitors 期刊论文 Journal of Semiconductors, 2016, 卷号: Vol.37 No.3, 页码: 034006 作者:  Zhu Yanyan;  Liu Shiyan;  Fang Zebo;  Tan Yongsheng;  He Gang 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/22 INDUCED LEAKAGE CURRENT  MICROSTRUCTURE  FILMS  ZRO2