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CORC

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Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2019, 卷号: 459, 页码: 143-147
作者:  Li, Zongzhen;  Liu, Tianqi;  Bi, Jinshun;  Yao, Huijun;  Zhang, Zhenxing
收藏  |  浏览/下载：34/0  |  提交时间：2022/01/19
Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2019, 卷号: 40, 期号: 10, 页码: 1634-1637
作者:  Li, Zongzhen;  Liu, Jie;  Zhai, Pengfei;  Liu, Tianqi;  Bi, Jinshun
收藏  |  浏览/下载：10/0  |  提交时间：2022/01/19
Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks 期刊论文
Journal of Materials Science & Technology, 2019, 卷号: Vol.35 No.5, 页码: 769-776
作者:  Die Wang;  Shuang Liang;  Fen Qiao;  Gang He
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/24
Atomic-layer-deposited (ALD) Al2O3 passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks 期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2019, 卷号: 35, 期号: 5, 页码: 769-776
作者:  Liang, Shuang[1];  He, Gang[2];  Wang, Die[3];  Qiao, Fen[4]
收藏  |  浏览/下载：52/0  |  提交时间：2019/12/24
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD-Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
ADVANCED ELECTRONIC MATERIALS, 2018, 卷号: 4, 期号: 4, 页码: 9
作者:  Jiang, Shanshan;  He, Gang;  Liu, Mao;  Zhu, Li;  Liang, Shuang
收藏  |  浏览/下载：65/0  |  提交时间：2019/06/10
Interface Modulation and Optimization of Electrical Properties of HfGdO/GaAs Gate Stacks by ALD‐Derived Al2O3 Passivation Layer and Forming Gas Annealing 期刊论文
Advanced Electronic Materials, 2018, 卷号: Vol.4 No.4
作者:  Wendong Li;  Shuang Liang;  Li Zhu;  Mao Liu;  Mingliang Tian
收藏  |  浏览/下载：44/0  |  提交时间：2019/04/22
Atomic-layer-deposited AlO passivation dependent interface chemistry, band alignment and electrical properties of HfYO/Si gate stacks 期刊论文
Journal of Materials Science & Technology, 2018
作者:  Die Wang;  Shuang Liang;  Fen Qiao;  Gang He
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/24
Comprehensive investigation of the interfacial charges and dipole in GeOx/ALO gate stacks of Ge MOS capacitor by postdeposition annealing 期刊论文
JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 卷号: Vol.57 No.10
作者:  Zhou, Lixing;  Wang, Xiaolei;  Ma, Xueli;  Han, Kai;  Wang, Yanrong
收藏  |  浏览/下载：10/0  |  提交时间：2019/12/26
Mobility Degradation by Remote Coulomb Scattering and Distribution of Charge and Dipole in Al2O3/GeOx Gate Stacks of Ge Based MOSFET 会议论文
作者:  Xiang JJ(项金娟);  Zhou LX(周丽星);  Wang XL(王晓磊);  Zhao C(赵超);  Ye TC(叶甜春)
收藏  |  浏览/下载：14/0  |  提交时间：2018/07/26
Effects of Annealing Ambient on Interface Charge and Dipole in GeOx/Al2O3 Gate Stacks of Ge Based MOSCAP 会议论文
作者:  Wang XL(王晓磊);  Xiang JJ(项金娟);  Zhao C(赵超);  Wang WW(王文武);  Ye TC(叶甜春)
收藏  |  浏览/下载：13/0  |  提交时间：2018/07/26

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