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Verification of SEU resistance in 65 nm high-performance SRAM with dual DICE interleaving and EDAC mitigation strategies 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2021, 卷号: 32, 期号: 12, 页码: 13
作者:  He, Ze;  Zhao, Shi-Wei;  Liu, Tian-Qi;  Cai, Chang;  Yan, Xiao-Yu
收藏  |  浏览/下载:68/0  |  提交时间:2022/01/12
Multiple Layout-Hardening Comparison of SEU-Mitigated Filp-Flops in 22-nm UTBB FD-SOI Technology 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2020, 卷号: 67, 期号: 1, 页码: 374-381
作者:  Cai, Chang;  Liu, Tianqi;  Zhao, Peixiong;  Fan, Xue;  Huang, Hongyang
收藏  |  浏览/下载:23/0  |  提交时间:2022/01/19
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 会议论文
Geneva, SWITZERLAND, OCT 02-06, 2017
作者:  Zheng, Qiwen;  Cui, Jiangwei;  Lu, Wu;  Guo, Hongxia;  Liu, Jie
收藏  |  浏览/下载:38/0  |  提交时间:2018/10/08
The Increased Single-Event Upset Sensitivity of 65-nm DICE SRAM Induced by Total Ionizing Dose 期刊论文
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 卷号: 65, 期号: 8, 页码: 1920-1927
作者:  Zheng, QW (Zheng, Qiwen)[ 1 ];  Cui, JW (Cui, Jiangwei)[ 1 ];  Lu, W (Lu, Wu)[ 1 ];  Guo, HX (Guo, Hongxia)[ 1 ];  Liu, J (Liu, Jie)[ 2 ]
收藏  |  浏览/下载:53/0  |  提交时间:2018/09/27
Azimuthal dependence of single-event and multiple-bit upsets in SRAM devices with anisotropic layout 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2015, 卷号: 26, 页码: 7
作者:  Duan Jing-Lai;  En Yun-Fei;  Xi Kai;  Mo Dan;  Luo Jie
收藏  |  浏览/下载:14/0  |  提交时间:2018/05/31
Nonvolatile Radiation Hardened DICE Latch 会议论文
2015 15TH NON-VOLATILE MEMORY TECHNOLOGY SYMPOSIUM (NVMTS), 2015-01-01
作者:  Pang, Tingting;  Kang, Wang;  Ran, Yi;  Zhang, Youguang;  Lv, Weifeng
收藏  |  浏览/下载:2/0  |  提交时间:2020/01/06


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