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The effects of Eu3+ doping on the epitaxial growth and photovoltaic properties of BiFeO3 thin films
期刊论文
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2022, 卷号: 106, 页码: 49-55
作者:
Feng, Dingshuai
;
Huang, Biaohong
;
Li, Lingli
;
Li, Xiaoqi
;
Gu, Youdi
收藏
  |  
浏览/下载:19/0
  |  
提交时间:2022/07/01
Ferroelectric
Photovoltaic effect
BiFeO3
Eu3+ doping
Band gap
Giant Piezoelectric Coefficient in Lead-Free BiFe0.975Ti0.025O3-CaTiO3 Solid Solution Thin Films
期刊论文
CRYSTAL GROWTH & DESIGN, 2021, 卷号: 21
作者:
Shu, Mingfang
;
Yang, Bingbing
;
Liu, Miao
;
Zhu, Shunjin
;
Li, Sumei
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2022/01/10
Evolution of structure and electrical properties of epitaxial BiFeO3 thin films through solution and annealing atmosphere
期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2020, 卷号: 843
作者:
Jin, Linghua
;
Liu, Miao
;
Li, Chenhui
;
Song, Dongpo
;
Yang, Bingbing
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  |  
浏览/下载:16/0
  |  
提交时间:2020/10/26
Epitaxial BFO thin films
Ferroelectric
Precursor
Annealing atmosphere
Design of flexible inorganic BiFe0.93Mn0.07O3 ferroelectric thin films for nonvolatile memory
期刊论文
JOURNAL OF MATERIOMICS, 2020, 卷号: 6
作者:
Yang, Bingbing
;
Li, Chenhui
;
Liu, Miao
;
Wei, Renhuai
;
Tang, Xianwu
收藏
  |  
浏览/下载:22/0
  |  
提交时间:2020/10/26
Inorganic ferroelectric
Flexible electronics
Lead-free BiFe0.93Mn0.07O3
All chemical solution deposition of epitaxial porous BiFe(0.93)Mn(0.07)O(3)thin films
期刊论文
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2020
作者:
Zhang, Li
;
Yang, Bingbing
;
Deng, Yan
;
Zhao, Chengbing
;
Yu, Jiangying
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  |  
浏览/下载:16/0
  |  
提交时间:2020/10/26
Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO3 Multiferroic Films
期刊论文
ADVANCED FUNCTIONAL MATERIALS, 2020, 卷号: 30, 期号: 22, 页码: 10
作者:
Sando, Daniel
;
Han, Mengjiao
;
Govinden, Vivasha
;
Paull, Oliver
;
Appert, Florian
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  |  
浏览/下载:26/0
  |  
提交时间:2021/02/02
BiFeO3
domain structures
interface effects
multiferroics
strain gradients
thin films
The effect of oxygen vacancy plate on the domain structure in BiFeO3 thin films by phase field simulations
期刊论文
Journal of Applied Physics, 2020, 卷号: 127, 期号: 9
作者:
Tian, X.H.
;
Wang, Y.J.
;
Tang, Y.L.
;
Zhu, Y.L.
;
Ma, X.L.
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  |  
浏览/下载:2/0
  |  
提交时间:2020/11/14
Bismuth compounds
Domain walls
Ferroelectric materials
Iron compounds
Oxygen
Plates (structural components)
BiFeO3 thin film
Charged domain wall
Complex pattern
Domain structure
Effect of oxygen
Phase-field simulation
Transition behavior
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
ACTA MATERIALIA, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W. R.
;
Tian, X. H.
;
Jiang, Y. X.
;
Zhu, Y. L.
;
Tang, Y. L.
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2021/02/02
BiFeO3 films
Oxygen vacancy plates
Charged domain wall pinning
Aberration-corrected scanning transmission electron microscopies
Phase field simulations
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
会议论文
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/12/18
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
TransmissionsAberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
Unveiling the pinning behavior of charged domain walls in BiFeO3 thin films via vacancy defects
期刊论文
Acta Materialia, 2020, 卷号: 186, 页码: 68-76
作者:
Geng, W.R.
;
Tian, X.H.
;
Jiang, Y.X.
;
Zhu, Y.L.
;
Tang, Y.L.
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2020/11/14
Bismuth compounds
Defects
Domain walls
Electric field measurement
Electronic states
Ferroelectric materials
Film growth
High resolution transmission electron microscopy
Interface states
Iron compounds
Modulation
Oxygen
Scanning electron microscopy
Thin films
Transmissions
Aberration-corrected scanning transmission electron microscopies
BiFeO3 thin film
Charged domain wall
Electronics devices
Oxygen pressure
Phase-field simulation
Theoretical simulation
Vacancy Defects
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