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科研机构
北京航空航天大学 [13]
上海大学 [1]
西安理工大学 [1]
内容类型
期刊论文 [10]
会议论文 [5]
发表日期
2016 [15]
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A low resistivity n(++)-InGaN/p(++)-GaN polarization-induced tunnel junction
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 卷号: 49
作者:
Hu, Weiwei[1]
;
Zhang, Shuming[2]
;
Ikeda, Masao[3]
;
Chen, Yigang[4]
;
Liu, Jianping[5]
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/04/26
tunnel junction
polarization charge
current density
tunneling probability
Tunnel Field-Effect Transistor With an L-Shaped Gate
期刊论文
2016, 卷号: 37, 页码: 839-842
作者:
Yang, Zhaonian
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2019/12/20
Band-to-band tunneling (BTBT)
L-shaped gate
tunnel field-effect transistor (TFET)
tunneling junction
Stochastic Spintronic Device based Synapses and Spiking Neurons for Neuromorphic Computation
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Zhang, Deming
;
Zeng, Lang
;
Zhang, Youguang
;
Zhao, Weisheng
;
Klein, Jacques Olivier
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Spintronics devices
Magnetic Tunnel Junction (MTJ)
Neuromorphic Computation
Compound Scheme
Analog-like Weight Spectrum
Stochastic Spiking Neuron (SSN)
A novel circuit design of true random number generator using magnetic tunnel junction
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Wang, You
;
Cai, Hao
;
Naviner, Lirida A. B.
;
Klein, Jacques-Olivier
;
Yang, Jianlei
收藏
  |  
浏览/下载:6/0
  |  
提交时间:2019/12/30
true random number generator
FDSOI
magnetic tunnel junction
stochastic switching
process variation
Multi-context Non-volatile Content Addressable Memory Using Magnetic Tunnel Junctions
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Deng, Erya
;
Anghel, Lorena
;
Prenat, Guillaume
;
Zhao, Weisheng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction
non-volatile
content addressable memory
multi- context
logic-in-memory
Low Power Magnetic Flip-Flop Optimization With FDSOI Technology Boost
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2016, 卷号: 52
作者:
Cai, Hao
;
Wang, You
;
De Naviner, Lirida Alves Barros
;
Zhao, Weisheng
收藏
  |  
浏览/下载:11/0
  |  
提交时间:2019/12/30
Body bias (BB)
energy-delay optimization
fully depleted silicon-on-insulator (FDSOI)
magnetic flip-flop (MFF)
magnetic tunnel junction (MTJ)
poly bias (PB)
Approximate Computing in MOS/Spintronic Non-Volatile Full-Adder
会议论文
Proceedings of the 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH), 2016-01-01
作者:
Cai, Hao
;
Wang, You
;
Naviner, Lirida A. B.
;
Wang, Zhaohao
;
Zhao, Weisheng
收藏
  |  
浏览/下载:14/0
  |  
提交时间:2019/12/30
Approximate computing
UTBB-FDSOI
magnetic tunnel junction
nonvolatile full adder
ultra low power
High-Speed, Low-Power, and Error-Free Asynchronous Write Circuit for STT-MRAM and Logic
期刊论文
IEEE TRANSACTIONS ON MAGNETICS, 2016, 卷号: 52
作者:
Zhang, Deming
;
Zeng, Lang
;
Wang, Gefei
;
Zhang, Yu
;
Zhang, Youguang
收藏
  |  
浏览/下载:16/0
  |  
提交时间:2019/12/30
Built-in sensing circuit (BSC)
cost-efficient
error-free
magnetic tunnel junction (MTJ)
non-volatile memory (NVM)
self-terminated
spin-transfer torque (STT)
Spintronic logic design methodology based on spin Hall effect-driven magnetic tunnel junctions
期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 卷号: 49
作者:
Kang, Wang
;
Wang, Zhaohao
;
Zhang, Youguang
;
Klein, Jacques-Olivier
;
Lv, Weifeng
收藏
  |  
浏览/下载:2/0
  |  
提交时间:2019/12/30
direct cascading
magnetic tunnel junction
spin Hall effect
spintronic logic
Radiation-Induced Soft Error Analysis of STT-MRAM: A Device to Circuit Approach
期刊论文
IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS, 2016, 卷号: 35, 页码: 380-393
作者:
Yang, Jianlei
;
Wang, Peiyuan
;
Zhang, Yaojun
;
Cheng, Yuanqing
;
Zhao, Weisheng
收藏
  |  
浏览/下载:3/0
  |  
提交时间:2019/12/30
Magnetic tunnel junction (MTJ)
radiation
soft error
spin-transfer torque magnetic random access memory (STT-MRAM)
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