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Impact of heavy ion energy and species on single-event upset in commercial floating gate cells 期刊论文
MICROELECTRONICS RELIABILITY, 2021, 卷号: 120, 页码: 6
作者:  Ye, Bing;  Mo, Li-Hua;  Zhai, Peng-Fei;  Cai, Li;  Liu, Tao
收藏  |  浏览/下载：40/0  |  提交时间：2021/12/09
Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM* 期刊论文
CHINESE PHYSICS B, 2021, 卷号: 30, 期号: 3, 页码: 8
作者:  Mo, Li-Hua;  Ye, Bing;  Liu, Jie;  Luo, Jie;  Sun, You-Mei
收藏  |  浏览/下载：33/0  |  提交时间：2021/12/10
Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device 期刊论文
SYMMETRY-BASEL, 2020, 卷号: 12, 期号: 12, 页码: 10
作者:  Ye, Bing;  Mo, Li-Hua;  Liu, Tao;  Sun, You-Mei;  Liu, Jie
收藏  |  浏览/下载：13/0  |  提交时间：2021/12/13
Mechanisms of alpha particle induced soft errors in nanoscale static random access memories 期刊论文
ACTA PHYSICA SINICA, 2020, 卷号: 69, 期号: 13, 页码: 9
作者:  Zhang Zhan-Gang;  Ye Bing;  Ji Qing-Gang;  Guo An-Long;  Xi Kai
收藏  |  浏览/下载：10/0  |  提交时间：2022/01/12
Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 102, 页码: 6
作者:  Yin, Ya-nan;  Liu, Jie;  Liu, Tian-qi;  Ye, Bing;  Ji, Qing-gang
收藏  |  浏览/下载：8/0  |  提交时间：2022/01/19
Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs 期刊论文
NUCLEAR SCIENCE AND TECHNIQUES, 2019, 卷号: 30, 期号: 5, 页码: 11
作者:  Zhao, Pei-Xiong;  Geng, Chao;  Zhang, Zhan-Gang;  Liu, Jie;  Li, Xiao-Yuan
收藏  |  浏览/下载：60/0  |  提交时间：2019/11/10
Effects of total ionizing dose on single event effect sensitivity of FRAMs 期刊论文
MICROELECTRONICS RELIABILITY, 2019, 卷号: 95, 页码: 1-7
作者:  Ji, Qinggang;  Liu, Jie;  Li, Dongqing;  Liu, Tianqi;  Ye, Bing
收藏  |  浏览/下载：54/0  |  提交时间：2019/11/10
Influences of total ionizing dose on single event effect sensitivity in floating gate cells 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 8, 页码: 086103
作者:  Zhao, Pei-Xiong;  Liu, Tian-Qi;  Ye, Bing;  Luo, Jie;  Sun, You-Mei
收藏  |  浏览/下载：33/0  |  提交时间：2018/10/08
Investigation of flux dependent sensitivity on single event effect in memory devices 期刊论文
CHINESE PHYSICS B, 2018, 卷号: 27, 期号: 7, 页码: 076101
作者:  Liu, Tian-qi;  Xi, Kai;  Hou, Ming-dong;  Sun, You-mei;  Duan, Jing-lai
收藏  |  浏览/下载：30/0  |  提交时间：2018/10/08

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