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CORC

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Defects Induced Charge Trapping/Detrapping and Hysteresis Phenomenon in MoS2 Field-Effect Transistors: Mechanism Revealed by Anharmonic Marcus Charge Transfer Theory 期刊论文
ACS APPLIED MATERIALS & INTERFACES, 2021, 卷号: 14, 期号: 1, 页码: 2185–2193
作者:  Ma, Xiaolei;   Liu, Yue-Yang;   Zeng, Lang;   Chen, Jiezhi;   Wang, Runsheng;   Wang, Lin-Wang;   Wu, Yanqing;   Jiang, Xiangwei
收藏  |  浏览/下载：28/0  |  提交时间：2022/03/23
High-performance magnetic tunnel junctions based on two-dimensional Bi2O2Se 期刊论文
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2021, 卷号: 539, 页码: 168346
作者:  Liu, Hao;   Wang, Pan;   Pan, Longfei;   Wen, Hongyu;   Liu, Yueyang;   Wu, Haibin;   Zong, Yixin;   Jiang, Xiangwei;   Wei, Zhongming;   Xia, Jianbai
收藏  |  浏览/下载：61/0  |  提交时间：2022/03/23
Electronically induced defect creation at semiconductor/oxide interface revealed by time-dependent density functional theory 期刊论文
PHYSICAL REVIEW B, 2021, 卷号: 104, 期号: 11, 页码: 115310
作者:  Liu, Yue-Yang;   Wei, Zhongming;   Meng, Sheng;   Wang, Runsheng;   Jiang, Xiangwei;   Huang, Ru;   Li, Shu-Shen;   Wang, Lin-Wang
收藏  |  浏览/下载：18/0  |  提交时间：2022/03/28
Anharmonic multi-phonon nonradiative transition: An ab initio calculation approach 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2020, 卷号: 63, 期号: 7, 页码: 277312
作者:  Yao Xiao;   ZiWu Wang;   Lin Shi;   XiangWei Jiang;   ShuShen Li ;   LinWang Wang
收藏  |  浏览/下载：21/0  |  提交时间：2021/06/22
Piezoelectric Tunnel FET With a Steep Slope 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2020, 卷号: 41, 期号: 6, 页码: 948-951
作者:  Yuxiong Long , Student Member,IEEE;   Jun Z. Huang;   Qianqian Huang,Member, IEEE;   Nuo Xu, Member, IEEE;   Xiangwei Jiang ,Member,IEEE;   Zhi-Chuan Niu ;   Ru Huang, Fellow, IEEE;   Shu-Shen Li
收藏  |  浏览/下载：35/0  |  提交时间：2021/06/17
Schottky-barrier modulation at germanium/monolayer MoS2 heterojunction interface: the roles of passivation and interfacial layer 期刊论文
APPLIED PHYSICS EXPRESS, 2020, 卷号: 13, 期号: 2, 页码: 021004
作者:  Xiaolei Ma;   Xiangwei Jiang;  Yuan Li;   Jiezhi Chen
收藏  |  浏览/下载：22/0  |  提交时间：2021/11/30
Three-Dimensional Mechanistic Modeling of Gate Leakage Current in High- κ MOSFETs 期刊论文
PHYSICAL REVIEW APPLIED, 2020, 卷号: 13, 期号: 2, 页码: 024020
作者:  Feilong Liu;   Yue-Yang Liu;   Ling Li;   Guofu Zhou;   Xiangwei Jiang;   Jun-Wei Luo
收藏  |  浏览/下载：23/0  |  提交时间：2021/11/30
Polarized photodetectors based on two-dimensional semiconductors 期刊论文
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, 2020, 卷号: 63, 期号: 3, 页码: 237331
作者:  Kai Zhao, ZhongMing Wei ,XiangWei Jiang
收藏  |  浏览/下载：23/0  |  提交时间：2021/11/30
High-Performance Logic and Memory Devices Based on a Dual-Gated MoS2 Architecture 期刊论文
ACS APPLIED ELECTRONIC MATERIALS, 2020, 卷号: 2, 期号: 1, 页码: 111-119
作者:  Fuyou Liao;   Zhongxun Guo;   Yin Wang;   Yufeng Xie;   Simeng Zhang;   Yaochen Sheng;   Hongwei Tang;   Zihan Xu;   Antoine Riaud;   Peng Zhou;   Jing Wan;   Michael S. Fuhrer;   Xiangwei Jiang;   David Wei Zhang;   Yang Chai;   Wenzhong Bao
收藏  |  浏览/下载：45/0  |  提交时间：2021/12/21
Defects coupling impacts on mono-layer wse2 tunneling field-effect transistors 期刊论文
Applied physics express, 2019, 卷号: 12, 期号: 3
作者:  Wu,Jixuan;  Ma,Xiaolei;  Chen,Jiezhi;  Jiang,Xiangwei
收藏  |  浏览/下载：236/0  |  提交时间：2019/05/12

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