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Nanochannels: A 1D Vanadium Dioxide Nanochannel Constructed via Electric-Field-Induced Ion Transport and its Superior Metal-Insulator Transition (Adv. Mater. 39/2017) 期刊论文
Advanced Materials, 2017, 卷号: Vol.29 No.39
作者:  Xiao-Hong Xu and Run-Wei Li;  Hongwei Tan;  Shuang Gao;  Jun Ding;  Xiaohui Yi
收藏  |  浏览/下载：3/0  |  提交时间：2019/04/22
Oxygen vacancy effects in HfO2 -based resistive switching memory: First principle study. 期刊论文
AIP Advances, 2016, 卷号: Vol.6 No.8, 页码: 1-10
作者:  Xiaofeng Li;  Zhiyong Pan;  Yuehua Dai;  Feifei Wang
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/22
Oxygen vacancy effects in HfO2-based resistive switching memory: First principle study 期刊论文
AIP Advances, 2016, 卷号: Vol.6 No.8, 页码: 085209
作者:  Pan,Zhiyong;  Wang,Feifei;  Dai,Yuehua;  Li,Xiaofeng
收藏  |  浏览/下载：1/0  |  提交时间：2019/04/22
OXIDE  
A 2-D semi-analytical model of subthreshold surface potential for double doping polysilicon gate MOSFET 期刊论文
Journal of Computational Information Systems, 2015, 卷号: Vol.11 No.3, 页码: 883-892
作者:  Xu,Jianbin;  Yang,Jin;  Dai,Yuehua;  Zheng,Changyong;  Li,Ning
收藏  |  浏览/下载：9/0  |  提交时间：2019/04/22
A 2-D semi-analytical model of double-gate tunnel field-effect transistor 期刊论文
Journal of Semiconductors, 2015, 卷号: Vol.36 No.5, 页码: 054002
作者:  Xu Huifang;  Xu Jianbin;  Dai Yuehua;  Li Ning
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/22
Effects of interaction between defects on the uniformity of doping HfO-based RRAM: a first principle study 期刊论文
Journal of Semiconductors, 2013, 卷号: Vol.34 No.3
作者:  Yuehua, Dai;  Xiaofeng, Li;  Wei, Zhang;  Ming, Liu;  Maoxiu, Zhou
收藏  |  浏览/下载：6/0  |  提交时间：2019/04/24
DFT  hafnium  oxide  localized  effect  oxygen  vacancy  RRAM  
Double-bit-line sub-threshold storage unit circuit 专利
申请日期: 2012-01-01,
作者:  YUEHUA DAI;  XIULONG WU;  CHAO XU;  ZHENGPING LI;  NA BAI
收藏  |  浏览/下载：2/0  |  提交时间：2019/04/19
Sub-threshold storage circuit with high density and high robustness 专利
申请日期: 2012-01-01,
作者:  YUEHUA DAI;  XIULONG WU;  CHAO XU;  ZHENGPING LI;  NA BAI
收藏  |  浏览/下载：5/0  |  提交时间：2019/04/19
Single-end-operated subthreshold storage unit circuit 专利
申请日期: 2012-01-01,
作者:  YUEHUA DAI;  XIULONG WU;  CHAO XU;  ZHENGPING LI;  NA BAI
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/19
Capacitance performance of Single Material Double Workfunction Gate(SMDWG) MOSFET 期刊论文
Proceedings - 5th International Conference on Wireless Communications, Networking and Mobile Computing, WiCOM 2009, 2009
作者:  Junsheng,Li;  Junning,Chen;  Daoming,Ke;  Yuehua,Dai
收藏  |  浏览/下载：4/0  |  提交时间：2019/04/24

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