QQ客服 官方微博 反馈留言

浏览/检索结果: 共8条，第1-8条 帮助 限定条件 专题：华南理工大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Side Chain Influence on the Morphology and Photovoltaic Performance of 5-Fluoro-6-alkyloxybenzothiadiazole and Benzodithiophene Based Conjugated Polymers (EI收录) 期刊论文 ACS Applied Materials and Interfaces, 2015, 卷号: 7, 页码: 10710-10717 作者:  Li, Guangwu[1];  Zhao, Baofeng[2];  Kang, Chong[1];  Lu, Zhen[1];  Li, Cuihong[1] 收藏  |  浏览/下载：6/0  |  提交时间：2019/04/25 Blending  Carrier mobility  Chains  Copolymers  Nanostructured materials  Open circuit voltage  Solar cells  Solvents  Transmission electron microscopy   Synergistic effects of curcumin with emodin against the proliferation and invasion of breast cancer cells through upregulation of miR-34a 期刊论文 MOLECULAR AND CELLULAR BIOCHEMISTRY, 2013, 卷号: 382, 页码: 103-111 作者:  Guo, Jiaoli[1,2];  Li, Wenping[3];  Shi, Hongliu[2];  Xie, Xinhua[1,2];  Li, Laisheng[4] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/25 Curcumin  Emodin  Synergism  miR-34a  Breast cancer   Characteristics Sensitivity of FinFET to Fin Vertical Nonuniformity (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Xu, Jiaojiao[2,3];  Ma, Chenyue[3];  Zhang, Chenfei[3];  Zhang, Xiufang[3];  Wu, Wen[1] 收藏  |  浏览/下载：7/0  |  提交时间：2019/04/15 FinFET device  process fluctuation  vertical nonuniformity  performance variation   An Accurate Method to Extract and Separate Interface and Gate Oxide Traps by the MOSFET Subthreshold Current (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Chenfei[1,2,3];  Ma, Chenyue[2,3];  Xu, Jiaojiao[1];  Wang, Ruonan[2];  Zhao, Xiaojin[2] 收藏  |  浏览/下载：11/0  |  提交时间：2019/04/15 Interface Trap  Gate Oxide Trap  Subthreshold Current   A Regional Model for Threshold Switching in Phase Change Memory Based on Space Charge Effect (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Wang, Ling[1,2];  Lin, Xinnan[1,2];  Wang, Wei[1,2];  Wu, Jiazhen[1,2];  Wei, Yiqun[1,2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 phase change memory  Ovonic Threshold Switch  space charge effect  scaling trend   Comparison and Insight into Long-Channel MOSFET Drain Current Models (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Lining[1,2];  He, Jin[1,2];  Wu, Wen[1];  Wang, Guozeng[1];  Wu, Wen[1] 收藏  |  浏览/下载：1/0  |  提交时间：2019/04/15 MOSFET models  charge-sheet approximation  drain current model   Numerical Study on Effect of Random Dopant Fluctuation on Double Gate MOSFET Based 6-T SRAM Performance (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Zhang, Xiufang[1,2];  Ma, Chenyue[2];  Zhao, Wei[2];  Zhang, Chenfei[3];  Wang, Guozeng[2] 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/15 Analytic potential model for asymmetricunderlap gate-all-around MOSFET (CPCI-S收录) 会议论文 NANOTECHNOLOGY 2011: ELECTRONICS, DEVICES, FABRICATION, MEMS, FLUIDICS AND COMPUTATIONAL, NSTI-NANOTECH 2011, VOL 2 作者:  Wang, Shaodi[1,2];  Guo, Xinjie[1,2];  Zhang, Lining[2];  Zhang, Chenfei[1,2];  Liu, Zhiwei[2] 收藏  |  浏览/下载：5/0  |  提交时间：2019/04/15 asymmetric  underlap  misalinment  gate-all-around