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10 A/567 V normally off p-GaN gate HEMT with high-threshold voltage and low-gate leakage current 期刊论文
ELECTRONICS LETTERS, 2018
作者:  Wang, Qilong;  Zhang, Bingliang;  Du, Zhongkai;  Zhao, Jie(赵杰);  Chen, Fu(陈扶)
收藏  |  浏览/下载：87/0  |  提交时间：2019/03/27
An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel 期刊论文
CHINESE PHYSICS LETTERS, 2018
作者:  Yu, Guo-Hao(于国浩);  Cai, Yong(蔡勇);  Zhang, Bao-Shun(张宝顺);  Wang, Yi-Qun(王逸群);  Fu, Kai(付凯)
收藏  |  浏览/下载：49/0  |  提交时间：2019/03/27
Ambient-temperature diffusion and gettering of Pt atoms in GaN with surface defect region under60Co gamma or MeV electron irradiation 期刊论文
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2018
作者:  Li, Shuti;  Song, Weidong;  Huang, Rong;  Zhang, Jicai(张纪才);  Qin, G.G.
收藏  |  浏览/下载：32/0  |  提交时间：2019/03/27
Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs 期刊论文
AIP ADVANCES, 2018
作者:  Fan, Yaming(范亚明);  Song, Liang(宋亮);  Cai, Yong(蔡勇);  Zhang, Baoshun(张宝顺);  Zhao, Jie
收藏  |  浏览/下载：65/0  |  提交时间：2019/03/27
Degradation of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors under off-state electrical stress 期刊论文
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2018
作者:  Zhang, Baoshun(张宝顺);  Fan, Yaming(范亚明);  Hao, Ronghui(郝荣晖);  Yu, Guohao(于国浩);  Zhao, Jie
收藏  |  浏览/下载：46/0  |  提交时间：2019/03/27
p-GaN hybrid anode AlGaN/GaN diode with 1000 V operation 期刊论文
ACTA PHYSICA SINICA, 2018
作者:  Zhang Bao-Shun(张宝顺);  Chen Fu(陈扶);  Hao Rong-Hui(郝荣晖);  Tang Wen-Xin;  Yu Guo-Hao(于国浩)
收藏  |  浏览/下载：11/0  |  提交时间：2019/03/27
Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018
作者:  Deng, Xuguang(邓旭光);  Li, Xiang;  Xu, Ning;  Hao, Ronghui(郝荣晖);  Zhang, Xinping
收藏  |  浏览/下载：48/0  |  提交时间：2019/03/27
Nonpolar vertical GaN-on-GaN p-n diodes grown on free-standing (10(1)over-bar0) m-plane GaN 期刊论文
APPLIED PHYSICS EXPRESS, 2018
作者:  Fu, Houqiang;  Yang, Tsung-Han;  Xu, Ke(徐科);  Ponce, Fernando A.;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：34/0  |  提交时间：2019/03/27
Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors 期刊论文
APPLIED PHYSICS LETTERS, 2018
作者:  Ding, Xiaoyu;  Yu, Guohao;  Cheng, Kai;  Cai, Yong;  Zhang, Baoshun(张宝顺)
收藏  |  浏览/下载：31/0  |  提交时间：2019/03/27
Efficiency improvement of GaN-on-silicon thin-film light-emitting diodes with optimized via-like n-electrodes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2017
作者:  Feng, Bo;  Deng, Biao;  Fu, Yi;  Liu, Le Gong;  Li, Zeng Cheng
收藏  |  浏览/下载：20/0  |  提交时间：2018/02/05

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