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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO2 dielectric 期刊论文 journal of nanoscience and nanotechnology, 2011 Xu Honghua; Liu Xiaoyan; Du Gang; He Yuhui; Fan Chun; Han Ruqi; Kang Jinfeng 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Influence of Radial Stress on the Performance of Gate-All-Around Ge(110) NW FETs with HfO2 Dielectric 其他 2011-01-01 Xu, Honghua; Liu, Xiaoyan; Du, Gang; He, Yuhui; Fan, Chun; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 Radial Stress  Strain Tensor Distribution  Valence Subband  Hole Mobility  FIELD-EFFECT TRANSISTORS  LAYER  NANOWIRES  DEVICES  STRAIN  IMPACT   Influence of radial stress on the performance of gate-all-around Ge(110) NW FETs with HfO2 dielectric 其他 2011-01-01 Xu, Honghua; Liu, Xiaoyan; Du, Gang; He, Yuhui; Fan, Chun; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core-Shell Nanowire 其他 2010-01-01 Xu, Honghua; Liu, Xiaoyan; Du, Gang; Zhao, Yuning; He, Yuhui; Fan, Chun; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 FIELD-EFFECT TRANSISTORS  GROWTH  GERMANIUM  SILICON  VAPOR   Influence of Boundary Force on the Performance of Gate-all-around Ge (110) NW FETs with HfO(2) Gate Insulator 其他 2010-01-01 Xu, Honghua; Liu, Xiaoyan; Du, Gang; He, Yuhui; Fan, Chun; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/13 FIELD-EFFECT TRANSISTORS   Influence of boundary force on the performance of gate-all-around Ge (110) nw fets with HfO2 gate insulator 其他 2010-01-01 Xu, Honghua; Liu, Xiaoyan; Du, Gang; He, Yuhui; Fan, Chun; Han, Ruqi; Kang, Jinfeng 收藏  |  浏览/下载：6/0  |  提交时间：2015/11/13 Impact of Thickness and Deposition Temperature of Gate Dielectric on Valence Bands in Silicon Nanowires 其他 2009-01-01 Xu, Honghua; He, Yuhui; Fan, Chun; Zhao, Yuning; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan 收藏  |  浏览/下载：4/0  |  提交时间：2015/11/10 strain tensor components  thermal residual strain  valence subbands   Radial boundary forces-modulated valence band structure of Ge (110) nanowire 其他 2009-01-01 Honghua, Xu; Yuhui, He; Yuning, Zhao; Gang, Du; Jinfeng, Kang; Ruqi, Han; Xiaoyan, Liu; Chun, Fan 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 Radial Boundary Forces-Modulated Valence Band Structure of Ge (110) Nanowire 其他 2009-01-01 Xu, Honghua; He, Yuhui; Zhao, Yuning; Du, Gang; Kang, Jinfeng; Han, Ruqi; Liu, Xiaoyan; Fan, Chun 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 radial force  valence band  effective masses  densities of states  FIELD-EFFECT TRANSISTORS   Impact of Inhomogeneous Strain on the Valence Band Structures of Ge-Si Core-Shell Nanowires 其他 2008-01-01 He, Yuhui; Fan, Chun; Zhao, Yu Ning; Du, Gang; Liu, Xiao Yan; Han, Ruqi 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 strain effect  core-shell nanowire  valence band  QUANTUM-WELLS  HETEROSTRUCTURES  DOTS