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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Dynamic NBTI characteristics of p-MOSFET with N-plasma SiON gate dielectric 其他 2007-01-01 Yan, B.G.; Kang, J.F.; Sa, N.; Liu, X.Y.; Du, G.; Han, R.Q.; Liao, C.C.; Gan, Z.H.; Liao, M.; Wang, J.P.; Wong, W. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/10 Scalability and reliability characteristics of CVD HfO2 gate dielectrics with HfN electrodes for advanced CMOS applications 期刊论文 journal of the electrochemical society, 2007 Kang, J. F.; Yu, H. Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.F.; Chan, D. S. H.; Liu, X. Y.; Han, R. Q.; Kwong, D.L. 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 BIAS TEMPERATURE INSTABILITY  OXIDE  METAL  TRANSISTORS  GENERATION  STACK  MODEL  SIO2   Improved electrical and reliability characteristics of HfN-HfO2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first process 期刊论文 ieee electron device letters, 2005 Kang, JF; Yu, HY; Ren, C; Wang, XP; Li, MF; Chan, DSH; Yeo, YC; Sa, N; Yang, H; Liu, XY; Han, RQ; Kwong, DL 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/10 HfO2 gate dielectric  instability of V-th  mobility  nMOS transistor  sub-1-nm equivalent oxide thickness (EOT)  ELECTRODE   Mechanism of positive-bias temperature instability in sub-1-nm TaN/HfN/HfO2 gate stack with low preexisting traps 期刊论文 ieee electron device letters, 2005 Sa, N; Kang, JE; Yang, H; Liu, XY; He, YD; Han, RQ; Ren, C; Yu, HY; Chan, DSH; Kwong, DL 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/10 electric stress-induced defect generation (ESIDG)  high-kappa gate dielectric  positive-bias temperature instability (PBTI)  reaction-diffusion (R-D) model  DIELECTRIC STACKS  GENERATION  STRESS   Scalability and reliability of TaN/HfN/HfO(2) gate stacks fabricated by a high temperature process 其他 2005-01-01 Kang, JF; Yu, HY; Ren, C; Yang, H; Sa, N; Liu, XY; Han, RQ; Li, MF; Chan, DSH; Kwong, DL 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 Stress induced leakage current and time dependent dielectric breakdown characteristics of ultra-thin HFO2 gate dielectrics 其他 2004-01-01 Yang, Hong; Sa, Ning; Tang, Liang; Han, Ruqi; Yu, Y.H.; Ren, C.; Kang, Jinfeng 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/17 Combining clustering with moving sequential pattern mining: A novel and efficient technique 其他 2004-01-01 Ma, SA; Tang, SW; Yang, DQ; Wang, TJ; Han, JQ 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 TDDB characteristics of ultra-thin HfN/HfO2 gate stack 其他 2004-01-01 Yang, H; Sa, N; Tang, L; Liu, XY; Kang, JF; Han, RQ; Yu, HY; Ren, C; Li, MF; Chan, DSH; Kwong, DL 收藏  |  浏览/下载：2/0  |  提交时间：2015/11/13 TDDB characteristics of ultra-thin HfN/HfO2 gate stack 其他 2004-01-01 Yang, Hong; Sa, Ning; Tang, Liang; Liu, Xiaoyan; Kang, Jinfeng; Han, Ruqi; Yu, H.Y.; Ren, C.; Li, M.-F.; Chan, D.S.H.; Kwong, D.-L. 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13