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浏览/检索结果: 共9条，第1-9条 帮助 限定条件 专题：北京大学    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique 期刊论文 NANOSCALE RESEARCH LETTERS, 2017 Han, Runze; Huang, Peng; Zhao, Yudi; Chen, Zhe; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 RRAM  Crossbar  Atomic layer deposition (ALD)  Logic operation  MEMORY   Modeling and Optimization of Bilayered TaOx RRAM Based on Defect Evolution and Phase Transition Effects 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Zhao, Yudi; Huang, Peng; Chen, Zhe; Liu, Chen; Li, Haitong; Chen, Bing; Ma, Wenjia; Zhang, Feifei; Gao, Bin; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 Monte Carlo simulation  oxygen vacancies  phase transition (P-T)  resistive random access memory (RRAM)  resistive switching (RS)  TaOx  RESISTIVE SWITCHING MEMORIES  METAL-OXIDE RRAM  TANTALUM-PENTOXIDE  DEVICES   500mW 930nm femtosecond Nd: fiber laser for two-photon microscopic imaging 其他 2016-01-01 Chen, Bingying; Wang, Aimin; Wang, Yudi; Li, Yijun; Zhang, Zhigang 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 NM   Self-selection RRAM Cell with Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology 其他 2016-01-01 Huang, Peng; Chen, Sijie; Zhao, Yudi; Chen, Bing; Gao, Bin; Liu, Lifeng; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 Self-Selection RRAM Cell With Sub-mu A Switching Current and Robust Reliability Fabricated by High-K/Metal Gate CMOS Compatible Technology 期刊论文 IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016 Huang, Peng; Chen, Sijie; Zhao, Yudi; Chen, Bing; Gao, Bin; Liu, Lifeng; Chen, Yong; Zhang, Ziying; Bu, Weihai; Wu, Hanming; Liu, Xiaoyan; Kang, Jinfeng 收藏  |  浏览/下载：9/0  |  提交时间：2017/12/03 High-K/metal gate (HKMG)  nonliner  resistive random access memory (RRAM)  resistive switching  retention  ultralow switching current  OXIDE-BASED RRAM  DEVICE CHARACTERISTICS  CROSSBAR ARRAY  RESISTANCE  MODEL   Design and Application of Resistive Switching Devices for Novel Computing/Memory Architectures 其他 2016-01-01 Jinfeng Kang; Peng Huang; Haitong Li; Bin Gao; Yudi Zhao; Runze Han; Zheng Zhou; Zhe Chen; Chen Liu; Lifeng Liu; Xiaoyan Liu 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/03 resistive  switching  Switching  RESET  candidate  readout  operations  interfacial  stored  scalability  resistive  switching  Switching  RESET  candidate  readout  operations  interfacial  stored  scalability   Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits 期刊论文 ADVANCED MATERIALS, 2016 Huang, Peng; Kang, Jinfeng; Zhao, Yudi; Chen, Sijie; Han, Runze; Zhou, Zheng; Chen, Zhe; Ma, Wenjia; Li, Mu; Liu, Lifeng; Liu, Xiaoyan 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/04 memristors,nonvolatile logic,resistance switching,von Neumann bottleneck  RESISTIVE MEMORY  ARCHITECTURE  ELEMENT  NETWORK   Design and Application of Oxide-Based Resistive Switching Devices for Novel Computing Architectures 期刊论文 IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, 2016 Kang, Jinfeng; Huang, Peng; Gao, Bin; Li, Haitong; Chen, Zhe; Zhao, Yudi; Liu, Chen; Liu, Lifeng; Liu, Xiaoyan 收藏  |  浏览/下载：2/0  |  提交时间：2017/12/04 Resistive switching memory (RRAM)  physical model  optimization design  unified memory/computing architecture  MEMORY  MODEL  RRAM   Integration of somatic mutation, expression and functional data reveals potential driver genes predictive of breast cancer survival 期刊论文 bioinformatics oxford england, 2015 Suo Chen; Hrydziuszko Olga; Lee Donghwan; Pramana Setia; Saputra Dhany; Joshi Himanshu; Calza Stefano; Pawitan Yudi 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13