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浏览/检索结果: 共5条，第1-5条 帮助 限定条件 内容类型：其他     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Characteristics and threshold voltage model of GaN-based FinFET with recessed gate 其他 2018-01-01 作者:  Wang, Chong;  Wang, Xin;  Zheng, Xue-Feng;  Wang, Yun;  He, Yun-Long 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/26 AlGaN/GaN  FinFET  recessed  gate  threshold  voltage   Improved electrical stability of double-gate a-IGZO TFTs 其他 2015-01-01 He, Xin; Wang, Ling; Deng, Wei; Xiao, Xiang; Zhang, Letao; Leng, Chuanli; Chan, Mansun; Zhang, Shengdong 收藏  |  浏览/下载：7/0  |  提交时间：2017/12/03 Characteristics of double-gate a-IGZO TFT 其他 2014-01-01 He, Xin; Xiao, Xiang; Deng, Wei; Wang, Longyan; Wang, Ling; Chi, Shipeng; Shao, Yang; Chan, Mansun; Zhang, Shengdong 收藏  |  浏览/下载：3/0  |  提交时间：2015/11/13 A-IGZO thin film transistors with channel layer deposited at room temperature and 250C 其他 2014-01-01 Deng, Wei; He, Xin; Xiao, Xiang; Wang, Ling; Meng, Weizhi; Zhang, Shengdong 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13 An accurate method to extract and separate interface and gate oxide traps by the MOSFET subthreshold current 其他 2011-01-01 Zhang, Chenfei; Ma, Chenyue; Xu, Jiaojiao; Wang, Ruonan; Zhao, Xiaojin; Gu, Xin; Zhang, Xiufang; Wu, Wen; Wang, Wenping; Zhao, Wei; Ma, Yong; Wang, Ruonan; Zhang, Dongwei; Bian, Wei; Yang, Guozeng; Yan, Zhang; Liu, Zhiwei; Ma, Yong; He, Jin 收藏  |  浏览/下载：5/0  |  提交时间：2015/11/13