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Low defect thick homoepitaxial layers grown on 4H-SiC wafers for 6500 V JBS devices 会议论文
Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018, Beijing, China, 2018-07-09
作者:  Niu, Yingxi;  Tang, Xiaoyan;  Tian, Lixin;  Zheng, Liu;  Zhang, Wenting
收藏  |  浏览/下载:8/0  |  提交时间:2019/12/20


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