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| research on sram functional failure mode induced by total ionizing dose irradiation 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 11, 页码: -
作者: Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi ; Ren Di-Yuan
  收藏 | 浏览/下载：12/0 | 提交时间：2013/11/07
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| research on sram functional failure mode induced by total ionizing dose irradiation 期刊论文
ACTA PHYSICA SINICA, 2013, 卷号: 62, 期号: 11, 页码: 378-384
作者: Zheng Qi-Wen; Yu Xue-Feng; Cui Jiang-Wei; Guo Qi; Ren Di-Yuan
收藏 | 浏览/下载：1/0 | 提交时间：2013/11/07
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| The influence of channel size on total dose irradiation and hot-carrier effects of sub-micro NMOSFET 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 2, 页码: -
作者: Cui Jiang-Wei; Yu Xue-Feng; Ren Di-Yuan; Lu Jian
收藏 | 浏览/下载：21/0 | 提交时间：2012/11/29
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| Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 7, 页码: -
作者: Xi Shan-Bin; Lu Wu; Wang Zhi-Kuan; Ren Di-Yuan; Zhou Dong
收藏 | 浏览/下载：16/0 | 提交时间：2012/11/29
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| Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors 期刊论文
ACTA PHYSICA SINICA, 2012, 卷号: 61, 期号: 23, 页码: 374-380
作者: Xi Shan-Bin; Lu Wu; Ren Di-Yuan; Zhou Dong; Wen Lin
收藏 | 浏览/下载：15/0 | 提交时间：2013/11/07
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| Effects of orientation of substrate on the enhanced low-dose-rate sensitivity (ELDRS) in NPN transistors 期刊论文
CHINESE PHYSICS C, 2011, 卷号: 35, 期号: 2, 页码: 169-173
作者: Lu Wu; Zheng Yu-Zhan; Wang Yi-Yuan; Ren Di-Yuan; Guo Qi
收藏 | 浏览/下载：12/0 | 提交时间：2012/11/29
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| Theorical model of enhanced low dose rate sensitivity observed in p-type metal-oxide-semiconductor field-effect transistor 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 6
作者: Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Cui Jiang-Wei; Lan Bo
收藏 | 浏览/下载：34/0 | 提交时间：2012/11/29
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| Degradation and dose rate effects of bipolar linear regulator on ionizing radiation 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 9, 页码: -
作者: Wang Yi-Yuan; Lu Wu; Ren Di-Yuan; Guo Qi; Yu Xue-Feng
收藏 | 浏览/下载：17/0 | 提交时间：2012/11/29
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| Research on the total-dose irradiation damage effect for static random access memory-based field programmable gate array 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 3
作者: Gao Bo; Yu Xue-Feng; Ren Di-Yuan; Li Yu-Dong; Cui Jiang-Wei
收藏 | 浏览/下载：16/0 | 提交时间：2012/11/29
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| Characteristics of high- and low-dose-rate damage for domestic npn transistors of various emitter areas 期刊论文
ACTA PHYSICA SINICA, 2009, 卷号: 58, 期号: 8, 页码: 5572-5577
作者: Zheng Yu-Zhan; Lu Wu; Ren Di-Yuan; Wang Yi-Yuan; Guo Qi
收藏 | 浏览/下载：18/0 | 提交时间：2012/11/29
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