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Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Zheng, ZS; Liu, ZL; Zhang, GQ; Li, N; Fan, K; Zhang, EX; Yi, WB; Chen, M; Wang, X
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