CORC

浏览/检索结果: 共6条,第1-6条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Rational Design of Ultralarge Pb1−xSnxTe Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport 期刊论文
Advanced Materials, 2016, 卷号: 28, 期号: 4, 页码: 617-623
Qisheng Wang; Kaiming Cai; Jie Li; Yun Huang; Zhenxing Wang; Kai Xu; Feng Wang; Xueying Zhan; Fengmei Wang; Kaiyou Wang; Jun He
收藏  |  浏览/下载:16/0  |  提交时间:2017/03/16
Highly sensitive and fast phototransistor based on large size CVD-grown SnS2 nanosheets 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 33, 页码: 14093-14099
Yun Huang; Hui-Xiong Deng; Kai Xu; Zhen-Xing Wang; Qi-Sheng Wang; Feng-Mei Wang; Feng Wang; Xue-Ying Zhan; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载:28/0  |  提交时间:2016/03/29
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
Nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载:20/0  |  提交时间:2016/04/08
Rational Design of Ultralarge Pb1−xSnxTe Nanoplates for Exploring Crystalline Symmetry-Protected Topological Transport 期刊论文
Advanced Materials, 2015, 卷号: 28, 页码: 617-623
Qisheng Wang; Kaiming Cai; Jie Li; Yun Huang; Zhenxing Wang; Kai Xu; Feng Wang; Xueying Zhan; Fengmei Wang; Kaiyou Wang; Jun He
收藏  |  浏览/下载:14/0  |  提交时间:2016/04/08
Sulfur vacancy activated field effect transistors based on ReS2 nanosheets 期刊论文
nanoscale, 2015, 卷号: 7, 期号: 38, 页码: 15757-15762
Kai Xu; Hui-Xiong Deng; Zhenxing Wang; Yun Huang; Feng Wang; Shu-Shen Li; Jun-Wei Luo; Jun He
收藏  |  浏览/下载:14/0  |  提交时间:2016/03/29
Magnetic barrier on strained graphene: A possible valley filter 期刊论文
physical review b, 2010, 卷号: 82, 期号: 11, 页码: art. no. 115442
Zhai F (Zhai Feng); Zhao XF (Zhao Xiaofang); Chang K (Chang Kai); Xu HQ (Xu H. Q.)
收藏  |  浏览/下载:20/0  |  提交时间:2010/11/02


©版权所有 ©2017 CSpace - Powered by CSpace