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Anomalous Pressure Behavior of N-Cluster Emissions in GaAs0.973Sb0.022N0.005 期刊论文
chinese physics letters, 2009, 卷号: 26, 期号: 12, 页码: art.no.127101
Wang, WJ (Wang Wen-Jie); Deng, JJ (Deng Jia-Jun); Fu, XQ (Fu Xing-Qiu); Hu, B (Hu Bing); Ding, K (Ding Kun)
收藏  |  浏览/下载:230/52  |  提交时间:2010/03/08
Synthesis of GaN nanotip triangle pyramids on 3C-SiC epilayer/Si substrates via an in situ In-doping technique 期刊论文
journal of chemical physics, 2005, 卷号: 122, 期号: 10, 页码: art.no.104713
Dai L; Liu SF; Fu ZX; You LP; Zhu JJ; Lin BX; Zhang JC; Qin GG
收藏  |  浏览/下载:49/0  |  提交时间:2010/03/17
Mechanisms of the sidewall facet evolution in lateral epitaxial overgrowth of GaN by MOCVD 期刊论文
journal of physics d-applied physics, 2002, 卷号: 35, 期号: 21, 页码: 2731-2734
作者:  Zhao DG
收藏  |  浏览/下载:40/0  |  提交时间:2010/08/12


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