QQ客服 官方微博 反馈留言

浏览/检索结果: 共12条，第1-10条 帮助 限定条件 学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Competitive growth mechanisms of AlN on Si (111) by MOVPE 期刊论文 scientific reports, 2014, 卷号: 4, 页码: 6416 Feng, YX; Wei, HY; Yang, SY; Chen, Z; Wang, LS; Kong, SS; Zhao, GJ; Liu, XL 收藏  |  浏览/下载：22/0  |  提交时间：2015/03/25 Morphology and structure controlled growth of one-dimensional AlN nanorod arrays by hydride vapor phase epitaxy 期刊论文 rsc advances, 2014, 卷号: 4, 期号: 97, 页码: 54902-54906 Kong, SS; Wei, HY; Yang, SY; Li, HJ; Feng, YX; Chen, Z; Liu, XL; Wang, LS; Wang, ZG 收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20 Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 4, 页码: 043702 Jin, DD; Wang, LS; Yang, SY; Zhang, LW; Li, HJ; Zhang, H; Wang, JX; Xiang, RF; Wei, HY; Jiao, CM; Liu, XL; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：15/0  |  提交时间：2015/03/20 Study of the one dimensional electron gas arrays confined by steps in vicinal GaN/AlGaN heterointerfaces 期刊论文 journal of applied physics, 2014, 卷号: 115, 期号: 19, 页码: 193704 Li, HJ; Zhao, GJ; Liu, GP; Wei, HY; Jiao, CM; Yang, SY; Wang, LS; Zhu, QS 收藏  |  浏览/下载：19/0  |  提交时间：2015/03/25 Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates 期刊论文 journal of crystal growth, 2014, 卷号: 389, 页码: 1-4 Li, HJ; Liu, CB; Liu, GP; Wei, HY; Jiao, CM; Wang, JX; Zhang, H; Jin, DD; Feng, YX; Yang, SY; Wang, LS; Zhu, QS; Wang, ZG 收藏  |  浏览/下载：20/0  |  提交时间：2015/04/02 The growth and characterization of GaN grown on an Al2O3 coated (001)Si substrate by metalorganic vapor phase epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 4, 页码: 484-490 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG; Wang YT; Cheng LS; Zhang Z 收藏  |  浏览/下载：47/0  |  提交时间：2010/08/12 GaN  MOVPE growth  Al2O3 coated Si substrate  crystal structure  photoluminescence spectrum  SINGLE CRYSTALLINE GAN  HIGH-QUALITY GAN  INTERMEDIATE LAYER  BUFFER LAYERS  SI  FILMS  ALN  DEPOSITION  SAPPHIRE  MOLECULAR-BEAM EPITAXY   Fabrication of GaN epitaxial films on Al2O3/Si (001) substrates 期刊论文 science in china series e-technological sciences, 1998, 卷号: 41, 期号: 2, 页码: 203-207 Wang LS; Liu XG; Zan YD; Wang D; Wang J; Lu DC; Wang ZG 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 fabrication of GaN epitaxial films  Al2O3/Si(001) substrate  metalorganic chemical deposition  crystal structure and surface morphology  photoluminescence spectrum  GROWTH  DIODES  BUFFER LAYER   The influence of thickness on properties of GaN buffer layer and heavily Si-doped GaN grown by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 189, 期号: 0, 页码: 287-290 Liu XL; Wang LS; Lu DC; Wang D; Wang XH; Lin LY 收藏  |  浏览/下载：30/0  |  提交时间：2010/08/12 MOVPE  GaN  GaN Buffer  heavy Si-doping   The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy 期刊论文 journal of crystal growth, 1998, 卷号: 193, 期号: 1-2, 页码: 23-27 Liu XL; Lu DC; Wang LS; Wang XH; Wang D; Lin LY 收藏  |  浏览/下载：32/0  |  提交时间：2010/08/12 MOVPE  GaN buffer layer  growth rate  growth parameters  TRIMETHYLGALLIUM  MECHANISMS  QUALITY  AMMONIA  DIODES  MOCVD  GAAS  THERMAL-DECOMPOSITION   The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文 2nd international symposium on blue laser and light emitting diodes (2nd isblled), chiba, japan, sep 29-oct 02, 1998 Wang LS; Liu XL; Zan YD; Wang D; Lu DC; Wang ZG 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 SAPPHIRE