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| An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: art. no. 265103 作者: Yin HB ; Lin DF ; Hou QF ; Deng QW![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/2  |  提交时间:2011/07/07
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| Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 1, 页码: article no.18401 作者: Deng QW ; Hou QF ; Bi Y ; Yin HB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:41/5  |  提交时间:2011/07/05
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| Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文 applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104 作者: Deng QW![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:47/5  |  提交时间:2011/07/05
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| Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102 Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:41/4  |  提交时间:2011/07/05
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| Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文 physica b-condensed matter, 2011, 卷号: 406, 期号: 1, 页码: 73-76 作者: Hou QF ; Yin HB ; Deng QW![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:97/9  |  提交时间:2011/07/05
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| An investigation on In(x)Ga(1-x)N/GaN multiple quantum well solar cells 期刊论文 journal of physics d-applied physics, 2011, 卷号: 44, 期号: 26, 页码: 265103 Deng QW; Wang XL; Xiao HL; Wang CM; Yin HB; Chen H; Hou QF; Lin DF; Li JM; Wang ZG; Hou X
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:13/0  |  提交时间:2012/01/06
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| Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands 期刊论文 optics express, 2011, 卷号: 19, 期号: 2, 页码: 1065-1071 作者: Wei TB![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:44/4  |  提交时间:2011/07/05
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| Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文 chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104 Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:255/64  |  提交时间:2010/05/24
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| An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文 solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335 作者: Zhang ML ; Hou QF![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:129/30  |  提交时间:2010/03/08
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| AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文 9th international conference on solid-state and integrated-circuit technology, beijing, peoples r china, oct 20-23, 2008 作者: Hou QF ; Zhang ML![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:52/0  |  提交时间:2010/03/09
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