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CORC

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Growth and Characterization of InSb Thin Films on GaAs(001) without Any Buffer Layers by MBE 期刊论文
CHIN. PHYS. LETT., 2017, 卷号: 34, 期号: 7, 页码: 076105
作者:  Xiao-Meng Zhao;  Yang Zhang;  Li-Jie Cui;  Min Guan;  Bao-Qiang Wang
收藏  |  浏览/下载：18/0  |  提交时间：2018/06/15
Aluminum incorporation efficiencies in A- and C-plane AlGaN grown by MOVPE 期刊论文
chinese physics b, 2016, 卷号: 25, 期号: 4, 页码: 048105
Dong-Yue Han; Hui-Jie Li; Gui-Juan Zhao; Hong-Yuan Wei; Shao-Yan Yang; Lian-Shan Wang
收藏  |  浏览/下载：17/0  |  提交时间：2017/03/10
Carbon agent chemical vapor transport growth of Ga2O3 crystal 期刊论文
journal of semiconductors, 2016, 卷号: 37, 期号: 10, 页码: 103004
Su Jie; Liu Tong; Liu Jingming; Yang Jun; Shen Guiying; Bai Yongbiao; Dong Zhiyuan; Zhao Youwen
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10
Thermally induced native defect transform in annealed GaSb 期刊论文
chinese physics b, 2016, 卷号: 25, 期号: 7, 页码: 077801
Jie Su; Tong Liu; Jing-Ming Liu; Jun Yang; Yong-Biao Bai; Gui-Ying Shen; Zhi-Yuan Dong; Fang-Fang Wang; You-Wen Zhao
收藏  |  浏览/下载：15/0  |  提交时间：2017/03/10
Improved surface and electrical properties of passivated GaSb with lessalkaline sulfide solution 期刊论文
materials science in semiconductor processing, 2015, 卷号: 40, 页码: 685-689
Dongyan Tao; Yu Cheng; Jingming Liu; Jie Su; Tong Liu; Fengyun Yang; Fenghua Wang; Kewei Cao; Zhiyuan Dong; Youwen Zhao
收藏  |  浏览/下载：25/0  |  提交时间：2016/03/29
Effect of the thickness of InGaN interlayer on the a-plane GaN epilayer 期刊论文
chinese physics b, 2015, 卷号: 24, 期号: 2, 页码: 26802-26806
Jian-Xia Wang; Lian-Shan Wang; Qian Zhang; Xiang-Yue Meng; Shao-Yan Yang; Gui-Juan Zhao; Hui-Jie Li; Hong-Yuan Wei; Zhan-Guo Wang
收藏  |  浏览/下载：14/0  |  提交时间：2016/03/29
Polarization dependence of the light coupling to surface plasmons in an Ag nanoparticle & Ag nanowire system 期刊论文
chinese physics b, 2014, 卷号: 23, 期号: 11, 页码: 117302
Yang Chao-Jie; Zhao Hua-Bo; Wang Pei-Pei; Li Jie; Tang Peng; Qu Sheng-Chun; Lin Feng; Zhu Xing
收藏  |  浏览/下载：21/0  |  提交时间：2015/03/20
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN_AlN_GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang , Lin Zhao-Jun, Lü Yuan-Jie, Luan Chong-Biao and Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2014/03/18
Influence of Schottky drain contacts on the strained AlGaN barrier layer of AlGaN/AlN/GaN heterostructure field-effect transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 4, 页码: 047102
Cao Zhi-Fang; Lin Zhao-Jun; Lu Yuan-Jie; Luan Chong-Biao; Wang Zhan-Guo
收藏  |  浏览/下载：29/0  |  提交时间：2013/09/17
A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics 期刊论文
chinese physics b, 2012, 卷号: 21, 期号: 9, 页码: 097104
Lu YJ (Lu Yuan-Jie); Lin ZJ (Lin Zhao-Jun); Yu YX (Yu Ying-Xia); Meng LG (Meng Ling-Guo); Cao ZF (Cao Zhi-Fang); Luan CB (Luan Chong-Biao); Wang ZG (Wang Zhan-Guo)
收藏  |  浏览/下载：16/0  |  提交时间：2013/04/02

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