CORC

浏览/检索结果: 共11条,第1-10条 帮助

限定条件    
已选(0)清除 条数/页:   排序方式:
Theoretical study of the anisotropic electron scattering by steps in vicinal AlGaN/GaN heterostructures 期刊论文
physica e: low-dimensional systems and nanostructures, 2015, 卷号: 66, 页码: 116-119
Huijie Li; Guipeng Liu; Guijuan Zhao; Hongyuan Wei; Lianshan Wang; Shaoyan Yang; Zhen Chen; Zhanguo Wang
收藏  |  浏览/下载:18/0  |  提交时间:2016/03/29
X-ray probe of GaN thin films grown on InGaN compliant substrates 期刊论文
applied physics letters, 2013, 卷号: 102, 期号: 13, 页码: 132104
Xu, Xiaoqing; Li, Yang; Liu, Jianming; Wei, Hongyuan; Liu, Xianglin; Yang, Shaoyan; Wang, Zhanguo; Wang, Huanhua
收藏  |  浏览/下载:20/0  |  提交时间:2013/08/27
Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN-GaN high electron mobility transistors 期刊论文
applied physics letters, 2013, 卷号: 103, 期号: 23, 页码: 232109
Li, Huijie; Liu, Guipeng; Wei, Hongyuan; Jiao, Chunmei; Wang, Jianxia; Zhang, Heng; Dong Jin, Dong; Feng, Yuxia; Yang, Shaoyan; Wang, Lianshan; Zhu, Qinsheng; Wang, Zhan-Guo
收藏  |  浏览/下载:28/0  |  提交时间:2014/03/17
Numerical study of radial temperature distribution in the AlN sublimation growth system 期刊论文
crystal research and technology, 2013, 卷号: 48, 期号: 5, 页码: 321-327
Li, Huijie; Liu, Xianglin; Feng, Yuxia; Wei, Hongyuan; Yang, Shaoyan
收藏  |  浏览/下载:18/0  |  提交时间:2013/08/27
Influence of band bending and polarization on the valence band offset measured by x-ray photoelectron spectroscopy 期刊论文
journal of applied physics, 2010, 卷号: 107, 期号: 10, 页码: art. no. 104510
Xu XQ (Xu Xiaoqing); Liu XL (Liu Xianglin); Guo Y (Guo Yan); Wang J (Wang Jun); Song HP (Song Huaping); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:182/49  |  提交时间:2010/06/18
The role of zinc dopant and the temperature effect on the controlled growth of InNnanorods in metal-organic chemical vapor deposition system 期刊论文
crystengcomm, 2010, 卷号: 12, 期号: 11, 页码: 3936-3941
Song HP (Song Huaping); Guo Y (Guo Yan); Yang A (Yang Anli); Wei HY (Wei Hongyuan); Xu XQ (Xu Xiaoqing); Liu JM (Liu Jianming); Yang SY (Yang Shaoyan); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:23/0  |  提交时间:2010/11/14
Valence band offset of MgO/TiO2 (rutile) heterojunction measured by X-ray photoelectron spectroscopy 期刊论文
applied surface science, 2010, 卷号: 256, 期号: 23, 页码: 7327-7330
Zheng GL (Zheng Gaolin); Wang J (Wang Jun); Liu XL (Liu Xianglin); Yang AL (Yang Anli); Song HP (Song Huaping); Guo Y (Guo Yan); Wei HY (Wei Hongyuan); Jiao CM (Jiao Chunmei); Yang SY (Yang Shaoyan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo)
收藏  |  浏览/下载:167/22  |  提交时间:2010/08/17
Determination of the valence band offset of wurtzite InN/ZnO heterojunction by x-ray photoelectron spectroscopy 期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 16, 页码: art.no.162104
Zhang RQ (Zhang Riqing); Zhang PF (Zhang Panfeng); Kang TT (Kang Tingting); Fan HB (Fan Haibo); Liu XL (Liu Xianglin); Yang SY (Yang Shaoyan); Wei HY (Wei Hongyuan); Zhu QS (Zhu Qinsheng); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载:29/0  |  提交时间:2010/03/29
INN  
Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文
optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231
Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua)
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11
在复合衬底γ-Al2O3/Si(001)上生长GaN 期刊论文
半导体学报, 2005, 卷号: 26, 期号: 12, 页码: 2378-2384
作者:  刘喆;  王俊;  王俊;  肖红领
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/23


©版权所有 ©2017 CSpace - Powered by CSpace