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Valence band offset of beta-Ga2O3/wurtzite GaN heterostructure measured by X-ray photoelectron spectroscopy 期刊论文
nanoscale research letters, 2012, 卷号: 7, 页码: 562
Wei W (Wei, Wei); Qin ZX (Qin, Zhixin); Fan SF (Fan, Shunfei); Li ZW (Li, Zhiwei); Shi K (Shi, Kai); Zhu QS (Zhu, Qinsheng); Zhang GY (Zhang, Guoyi)
收藏  |  浏览/下载:43/0  |  提交时间:2013/04/18
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111) 期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ; Zhao, LB; Zhang, GY; Liu, XL; Zhu, QS; Wang, ZG; Jia, QJ; Guo, LP; Hu, TD
收藏  |  浏览/下载:66/3  |  提交时间:2010/03/08
Effect of an indium-doped barrier on enhanced near-ultraviolet emission from InGaN/AlGaN: In multiple quantum wells grown on Si(111) 期刊论文
nanotechnology, 2007, 卷号: 18, 期号: 1, 页码: art.no.015402
Wu JJ (Wu Jiejun); Zhang GY (Zhang Guoyi); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping)
收藏  |  浏览/下载:122/0  |  提交时间:2010/03/29


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