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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Suppression of hole leakage by adding a hole blocking layer prior to the first quantum barrier in GaN-based near-ultraviolet laser diodes 期刊论文 Phys. Status Solidi A, 2017, 卷号: 214, 期号: 10, 页码: 1700320 作者:  Yao Xing;  De Gang Zhao;  De Sheng Jiang;  Xiang Li;  Feng Liang 收藏  |  浏览/下载：39/0  |  提交时间：2018/07/11 Observation of positive and small electron affinity of Si-doped AlN films grown by metalorganic chemical vapor deposition on n-type 6H–SiC 期刊论文 Chinese Physics B, 2016, 卷号: 25, 期号: 5, 页码: 057703 Feng Liang; Ping Chen; De-Gang Zhao; De-Sheng Jiang; Zhi-Juan Zhao; Zong-Shun Liu; Jian-Jun Zhu; Jing Yang; Wei Liu; Xiao-Guang He; Xiao-Jing Li; Xiang Li; Shuang-Tao Liu; Hui Yang; Li-Qun Zhang; Jian-Ping Liu; Yuan-Tao Zhang; Guo-Tong Du 收藏  |  浏览/下载：30/0  |  提交时间：2017/03/10 Effect of localizaiton states on the electroluminescence spectral width of blue-green light emitting InGaN/GaN multiple quantum wells 期刊论文 journal of vacuum science & technology a, 2015, 卷号: 33, 期号: 6, 页码: 061502 Wei Liu; De Gang Zhao; De Sheng Jiang; Ping Chen; Zong Shun Liu; Jian Jun Zhu; Xiang Li; Ming Shi; Dan Mei Zhao; Jian Ping Liu; Shu Ming Zhang; Hui Wang; Hui Yang 收藏  |  浏览/下载：20/0  |  提交时间：2016/03/23 Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文 chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802 Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long) 收藏  |  浏览/下载：73/2  |  提交时间：2010/05/24 Ga vacancies  MOCVD  GaN  Schottky barrier photodetector  REVERSE-BIAS LEAKAGE  MOLECULAR-BEAM EPITAXY  P-N-JUNCTIONS  POSITRON-ANNIHILATION  DIODES  FILMS