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Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates 期刊论文
rsc advances, 2014, 卷号: 4, 期号: 98, 页码: 55430-55434
Zheng, CC; Ning, JQ; Wu, ZP; Wang, JF; Zhao, DG; Xu, K; Gao, J; Xu, SJ
收藏  |  浏览/下载:14/0  |  提交时间:2015/03/20
Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
applied physics letters, 2012, 卷号: 101, 期号: 19, 页码: 191102
Zheng CC (Zheng, C. C.); Xu SJ (Xu, S. J.); Zhang F (Zhang, F.); Ning JQ (Ning, J. Q.); Zhao DG (Zhao, D. G.); Yang H (Yang, H.); Che CM (Che, C. M.)
收藏  |  浏览/下载:20/0  |  提交时间:2013/03/27
Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique 期刊论文
applied physics express, 2012, 卷号: 5, 期号: 9, 页码: 091001
Lu LW (Lu, Liwu); Su SC (Su, Shichen); Ling CC (Ling, Chi-Chung); Xu SJ (Xu, Shijie); Zhao DG (Zhao, Degang); Zhu JJ (Zhu, Jianjun); Yang H (Yang, Hui); Wang JN (Wang, Jiannong); Gey WK (Gey, Weikun)
收藏  |  浏览/下载:18/0  |  提交时间:2013/04/02
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
applied physics letters, 2011, 卷号: 99, 期号: 11, 页码: 113115
Zhu JH; Ning JQ; Zheng CC; Xu SJ; Zhang SM; Yang H
收藏  |  浏览/下载:71/0  |  提交时间:2012/02/06
Optical properties of light-hole excitons in GaN epilayers 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 11, 页码: article no.116103
Zhang F; Xu SJ; Ning JQ; Zheng CC; Zhao DG; Yang H; Che CM
收藏  |  浏览/下载:46/3  |  提交时间:2011/07/05
Violet electroluminescence of AlInGaN-InGaN multiquantum-well light-emitting diodes: Quantum-confined stark effect and heating effect 期刊论文
ieee photonics technology letters, 2007, 卷号: 19, 期号: 9-12, 页码: 789-791
Li, J (Li, Jun); Shi, SL (Shi, S. L.); Wang, YJ (Wang, Y. J.); Xu, SJ (Xu, S. J.); Zhao, DG (Zhao, D. G.); Zhu, JJ (Zhu, J. J.); Yang, H (Yang, H.); Lu, F (Lu, F.)
收藏  |  浏览/下载:72/0  |  提交时间:2010/03/29
Influence of indium-tin-oxide thin-film quality on reverse leakage current of indium-tin-oxide/n-GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 3, 页码: art.no.033503
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Djurisic AB (Djurisic A. B.); Beling CD (Beling C. D.); Cheung CK (Cheung C. K.); Cheung CH (Cheung C. H.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载:26/0  |  提交时间:2010/04/11
Quantum dissipation and broadening mechanisms due to electron-phonon interactions in self-formed InGaN quantum dots 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 8, 页码: art.no.083123
作者:  Zhao DG
收藏  |  浏览/下载:653/4  |  提交时间:2010/04/11
Probing deep level centers in GaN epilayers with variable-frequency capacitance-voltage characteristics of Au/GaN Schottky contacts 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 14, 页码: art.no.143505
Wang RX (Wang R. X.); Xu SJ (Xu S. J.); Shi SL (Shi S. L.); Beling CD (Beling C. D.); Fung S (Fung S.); Zhao DG (Zhao D. G.); Yang H (Yang H.); Tao XM (Tao X. M.)
收藏  |  浏览/下载:42/0  |  提交时间:2010/04/11
Band gap renormalization and carrier localization effects in InGaN/GaN quantum-wells light emitting diodes with Si doped barriers 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 4, 页码: art.no.041903
作者:  Zhao DG
收藏  |  浏览/下载:39/0  |  提交时间:2010/04/11


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