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Influence of Indium Content on the Unintentional Background Doping and Device Performance of InGaN/GaN Multiple-Quantum-Well Solar Cells 期刊论文
IEEE JOURNAL OF PHOTOVOLTAICS, 2017, 卷号: 7, 期号: 4, 页码: 1017-1023
作者:  Wei Liu;  Degang Zhao;  Desheng Jiang;  Ping Chen;  Dongping Shi
收藏  |  浏览/下载:28/0  |  提交时间:2018/07/11


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