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浏览/检索结果: 共19条，第1-10条 帮助 限定条件 学科主题：光电子学     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Geometry parameter optimization of large cross-sectional S-shaped bent rib waveguides for silicon based optical switches 期刊论文 chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 744-746 Li ZY (Li Zhi-Yong); Liu JW (Liu Jing-Wei); Yu JZ (Yu Jin-Zhong) 收藏  |  浏览/下载：104/0  |  提交时间：2010/03/29 摘要: By using a genetic algorithm  geometry parameters of large cross-sectional S-bend rib waveguides are optimized aiming at the least total loss when the propagation loss is considered. Optimized results are presented as an example of S-bend rib waveguides based on silicon-on-insulator (SOI) 4 x 4 optical switches. The value of 2dB/cm is given to the propagation loss according to the experimental results. The simulation results indicate that the total loss drops from 1.0002dB down to 0.4375dB without considering a lateral offset. If the offset is adopted  the total loss reduces from 0.5463dB to 0.2365dB. In addition  the effect of the rib height ratio on the loss is analysed  and the optimal ratio is obtained to be 0.55.   Influence of defects in n(-)-GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors 期刊论文 applied physics letters, 2007, 卷号: 90, 期号: 6, 页码: art.no.062106 作者:  Li XY;  Jiang DS;  Yang H;  Zhu JJ;  Zhang SM 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/29 CHEMICAL-VAPOR-DEPOSITION   Paired interference 3-dB coupler based on SOI rib waveguides with anisotropic chemical wet etching 期刊论文 chinese optics letters, 2007, 卷号: 5, 期号: 4, 页码: 215-217 作者:  Li ZY 收藏  |  浏览/下载：68/14  |  提交时间：2010/03/08 SILICON-ON-INSULATOR   Thermal lensing effect in ridge structure InGaN multiple quantum well laser diodes 期刊论文 journal of applied physics, 2006, 卷号: 100, 期号: 4, 页码: art.no.046101 Li DY (Li D. Y.); Huang YZ (Huang Y. Z.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Liu ZS (Liu Z. S.); Zhang SM (Zhang S. M.); Ye XJ (Ye X. J.); Chong M (Chong M.); Chen LH (Chen L. H.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：45/0  |  提交时间：2010/04/11 LINEWIDTH ENHANCEMENT FACTOR  WAVE-GUIDE LASER  GAN SUBSTRATE  INDEX  TEMPERATURE  GAIN   Novel folding 8x8 silicon-based optical matrix switch with tapered waveguides and self-aligned corner mirrors 期刊论文 journal of lightwave technology, 2006, 卷号: 24, 期号: 12, 页码: 5008-5012 Li ZY (Li Zhiyong); Yu JZ (Yu Jinzhong); Chen SW (Chen Shaowu); Liu JW (Liu Jingwei) 收藏  |  浏览/下载：48/0  |  提交时间：2010/03/29 corner reflection mirror   The effects of LT AlN buffer thickness on the properties of high Al composition AlGaN epilayers 期刊论文 materials letters, 2006, 卷号: 60, 期号: 29-30, 页码: 3693-3696 Wang XL (Wang X. L.); Zhao DG (Zhao D. G.); Li XY (Li X. Y.); Gong HM (Gong H. M.); Yang H (Yang H.); Liang JW (Liang J. W.) 收藏  |  浏览/下载：106/0  |  提交时间：2010/04/11 AlGaN  LT AlN  TAXRD  dislocation   Parasitic reaction and its effect on the growth rate of AlN by metalorganic chemical vapor deposition 期刊论文 journal of crystal growth, 2006, 卷号: 289, 期号: 1, 页码: 72-75 作者:  Jiang DS;  Li XY;  Zhu JJ;  Yang H;  Zhao DG 收藏  |  浏览/下载：95/0  |  提交时间：2010/04/11 growth rate  parasitic reaction  MOCVD  AlN  GAS-PHASE REACTIONS  MOVPE GROWTH  ALGAN MOVPE  ALXGA1-XN   Role of edge dislocations in enhancing the yellow luminescence of n-type GaN 期刊论文 applied physics letters, 2006, 卷号: 88, 期号: 24, 页码: art.no.241917 作者:  Jiang DS;  Zhu JJ;  Li XY;  Zhang SM;  Zhao DG 收藏  |  浏览/下载：47/0  |  提交时间：2010/04/11 CHEMICAL-VAPOR-DEPOSITION  MOLECULAR-BEAM EPITAXY  X-RAY-DIFFRACTION  MG-DOPED GAN  UNDOPED GAN  PHOTOLUMINESCENCE BANDS  THREADING DISLOCATIONS  POSITRON-ANNIHILATION  GROWTH STOICHIOMETRY  GALLIUM NITRIDE   Effect of Al incorporation on the AlGaN growth by metalorganic chemical vapor deposition 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 5, 页码: 2452-2455 Zhao, DG (Zhao, D. G.); Liu, ZS (Liu, Z. S.); Zhu, JJ (Zhu, J. J.); Zhang, SM (Zhang, S. M.); Jiang, DS (Jiang, D. S.); Yang, H (Yang, Hui); Liang, JW (Liang, J. W.); Li, XY (Li, X. Y.); Gong, HM (Gong, H. M.) 收藏  |  浏览/下载：30/0  |  提交时间：2010/03/29 Al incorporation   Characteristics of InGaN multiple quantum well blue-violet laser diodes 期刊论文 science in china series e-technological sciences, 2006, 卷号: 49, 期号: 6, 页码: 727-732 Li DY (Li Deyao); Zhang SM (Zhang Shuming); Wang JF (Wang Jianfeng); Chen J (Chen Jun); Chen LH (Chen Lianghui); Chong M (Chong Ming); Zhu JJ (Zhu Jianjun); Zhao DG (Zhao Degang); Liu ZS (Liu Zongshun); Yang H (Yang Hui); Liang JW (Liang Junwu) 收藏  |  浏览/下载：28/0  |  提交时间：2010/04/11 metalorganic chemical vapor deposition (MOCVD)  GaN-hased laser diodes  multiple quantum well  ridge waveguide  threshold current  ELECTRICAL-PROPERTIES  GAN SUBSTRATE  CONTACTS