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Impact of electrical stress on total ionizing dose effects on graphene nano-disc non-volatile memory devices 期刊论文
MICROELECTRONICS RELIABILITY, 2020, 卷号: 114, 期号: 11, 页码: 1-5
作者:  Xi, K (Xi, K.)[ 1 ];  Bi, JS (Bi, J. S.)[ 1,2 ];  Xu, YN (Xu, Y. N.)[ 1 ];  Li, YD (Li, Y. D.)[ 3 ];  Zhang, ZG (Zhang, Z. G.)[ 4 ]
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